Intrinsic Grain Boundary Structure and Enhanced Defect States in Air-Sensitive Polycrystalline 1T'-WTe₂ Monolayer

Guo, Zenglong1,2; Han, Mengjiao3; Zeng, Shengfeng4; Yin, Zhouyi1,2; Tan, Junyang4; Niu, Kangdi1,2; Zhao, Erding1,2; Zhao, Yue1,2; Liu, Bilu4; Zou, Xiaolong4; Lin, Junhao1,2,5

2024-06-01

10.1002/adma.202402219

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

Monolayer WTe2 has attracted significant attention for its unconventional superconductivity and topological edge states. However, its air sensitivity poses challenges for studying intrinsic defect structures. This study addresses this issue using a custom-built inert gas interconnected system, and investigate the intrinsic grain boundary (GB) structures of monolayer polycrystalline 1T' WTe2 grown by nucleation-controlled chemical vapor deposition (CVD) method. These findings reveal that GBs in this system are predominantly governed by W-Te rhombi with saturated coordination, resulting in three specific GB prototypes without dislocation cores. The GBs exhibit anisotropic orientations influenced by kinks formed from these fundamental units, which in turn affect the distribution of grains in various shapes within polycrystalline flakes. Scanning tunneling microscopy/spectroscopy (STM/S) analysis further reveals metallic states along the intrinsic 120 degrees twin grain boundary (TGB), consistent with computed band structures. This systematic exploration of GBs in air-sensitive 1T' WTe2 monolayers provides valuable insights into emerging GB-related phenomena.

1D defect states air-sensitive WTe2 monolayer atomic STEM imaging CVD growth grain boundary

SCI ; EI

英语

第一 ; 通讯

Guangdong Innovative and Entrepreneurial Research Team Program[2019ZT08C044] ; Guangdong Basic Science Foundation[2023B1515120039] ; Shenzhen Science and Technology Program[20200925161102001] ; Science, Technology, and Innovation Commission of Shenzhen Municipality[ZDSYS20190902092905285] ; Quantum Science Strategic Special Project from the Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area[GDZX2301006] ; China Postdoctoral Science Foundation[2023M741545] ; State Funded Postdoctoral Researcher Program B[GZB20230288] ; null[11974156] ; null[51991343] ; null[51991340]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001247356900001

WILEY-V C H VERLAG GMBH

20242416260344

Chemical vapor deposition ; Defect states ; Grain boundaries ; Inert gases ; Scanning tunneling microscopy ; Tellurium compounds

Semiconducting Materials:712.1 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China
3.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
4.Tsinghua Univ, Inst Mat Res, Shenzhen Geim Graphene Ctr, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
5.Quantum Sci Ctr Guangdong Hong Kong Macao Greater, Hong Kong 518045, Peoples R China

Guo, Zenglong,Han, Mengjiao,Zeng, Shengfeng,et al. Intrinsic Grain Boundary Structure and Enhanced Defect States in Air-Sensitive Polycrystalline 1T'-WTe₂ Monolayer[J]. ADVANCED MATERIALS,2024,36.

Guo, Zenglong.,Han, Mengjiao.,Zeng, Shengfeng.,Yin, Zhouyi.,Tan, Junyang.,...&Lin, Junhao.(2024).Intrinsic Grain Boundary Structure and Enhanced Defect States in Air-Sensitive Polycrystalline 1T'-WTe₂ Monolayer.ADVANCED MATERIALS,36.

Guo, Zenglong,et al."Intrinsic Grain Boundary Structure and Enhanced Defect States in Air-Sensitive Polycrystalline 1T'-WTe₂ Monolayer".ADVANCED MATERIALS 36(2024).