中文版 | English
题名

Thermoelectric Transport Performance in p-Type AgSbTe2-Based Materials through Entropy Engineering

作者
通讯作者Wang, Guoyu; Dai, Ji-Yan
发表日期
2024-06-10
DOI
发表期刊
ISSN
1944-8244
EISSN
1944-8252
卷号16期号:24
摘要
Being a major obstacle, Ag2Te has always been restricted in p-type AgSbTe2-based materials to improve their thermoelectric performance. This work reveals a stabilized AgSbTe2 through Sn/Ge alloying as synthesized by melting, annealing, and hot press. Interestingly, addition of Sn/Ge in AgSbTe2 extended the solubility limit up to similar to 30% and hence suppressed Ag2Te in Ag(1-x)SnxSb(1-y)GeyTe2 compounds and led to enhanced electrical transport. Moreover, electrical and thermal transport properties of AgSbTe2 have been greatly affected by the phase transition of Ag2Te near 425 K. However, high-entropy Ag0.85Sn0.15Sb0.85Ge0.15Te2 compound results in a stabilized rock-salt structure and presents a high power factor of similar to 10.8 mu W cm(-1) K-2 at 757 K. Besides, density functional theory reveals that available multivalence bands in Sn/Ge-doped AgSbTe2 lead to reduction in energy offsets. Meanwhile, a variety of defects appear in the Ag0.85Sn0.15Sb0.85Ge0.15Te2 sample due to entropy change, and thus lattice thermal conductivity decreases. Ultimately, a high figure of merit of similar to 1.5 is attained at 757 K. This work demonstrates a roadmap for other group IV-VI materials so that the high-entropy approach may inhibit the impurity phases with extended solubility limit and result in high thermoelectric performance.
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
Hong Kong Polytechnic University[2019B121205001] ; Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices (GDSTC)[1-W23Z]
WOS研究方向
Science & Technology - Other Topics ; Materials Science
WOS类目
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:001243947500001
出版者
来源库
Web of Science
引用统计
被引频次[WOS]:1
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/788039
专题理学院_物理系
作者单位
1.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong 999077, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
4.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
5.Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
6.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
推荐引用方式
GB/T 7714
Basit, Abdul,Hussain, Tanveer,Li, Xin,et al. Thermoelectric Transport Performance in p-Type AgSbTe2-Based Materials through Entropy Engineering[J]. ACS APPLIED MATERIALS & INTERFACES,2024,16(24).
APA
Basit, Abdul.,Hussain, Tanveer.,Li, Xin.,Xin, Jiwu.,Zhang, Bin.,...&Dai, Ji-Yan.(2024).Thermoelectric Transport Performance in p-Type AgSbTe2-Based Materials through Entropy Engineering.ACS APPLIED MATERIALS & INTERFACES,16(24).
MLA
Basit, Abdul,et al."Thermoelectric Transport Performance in p-Type AgSbTe2-Based Materials through Entropy Engineering".ACS APPLIED MATERIALS & INTERFACES 16.24(2024).
条目包含的文件
条目无相关文件。
个性服务
原文链接
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
导出为Excel格式
导出为Csv格式
Altmetrics Score
谷歌学术
谷歌学术中相似的文章
[Basit, Abdul]的文章
[Hussain, Tanveer]的文章
[Li, Xin]的文章
百度学术
百度学术中相似的文章
[Basit, Abdul]的文章
[Hussain, Tanveer]的文章
[Li, Xin]的文章
必应学术
必应学术中相似的文章
[Basit, Abdul]的文章
[Hussain, Tanveer]的文章
[Li, Xin]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
[发表评论/异议/意见]
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。