题名 | Thermoelectric Transport Performance in p-Type AgSbTe2-Based Materials through Entropy Engineering |
作者 | |
通讯作者 | Wang, Guoyu; Dai, Ji-Yan |
发表日期 | 2024-06-10
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DOI | |
发表期刊 | |
ISSN | 1944-8244
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EISSN | 1944-8252
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卷号 | 16期号:24 |
摘要 | Being a major obstacle, Ag2Te has always been restricted in p-type AgSbTe2-based materials to improve their thermoelectric performance. This work reveals a stabilized AgSbTe2 through Sn/Ge alloying as synthesized by melting, annealing, and hot press. Interestingly, addition of Sn/Ge in AgSbTe2 extended the solubility limit up to similar to 30% and hence suppressed Ag2Te in Ag(1-x)SnxSb(1-y)GeyTe2 compounds and led to enhanced electrical transport. Moreover, electrical and thermal transport properties of AgSbTe2 have been greatly affected by the phase transition of Ag2Te near 425 K. However, high-entropy Ag0.85Sn0.15Sb0.85Ge0.15Te2 compound results in a stabilized rock-salt structure and presents a high power factor of similar to 10.8 mu W cm(-1) K-2 at 757 K. Besides, density functional theory reveals that available multivalence bands in Sn/Ge-doped AgSbTe2 lead to reduction in energy offsets. Meanwhile, a variety of defects appear in the Ag0.85Sn0.15Sb0.85Ge0.15Te2 sample due to entropy change, and thus lattice thermal conductivity decreases. Ultimately, a high figure of merit of similar to 1.5 is attained at 757 K. This work demonstrates a roadmap for other group IV-VI materials so that the high-entropy approach may inhibit the impurity phases with extended solubility limit and result in high thermoelectric performance. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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资助项目 | Hong Kong Polytechnic University[2019B121205001]
; Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices (GDSTC)[1-W23Z]
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WOS研究方向 | Science & Technology - Other Topics
; Materials Science
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WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:001243947500001
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出版者 | |
来源库 | Web of Science
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引用统计 |
被引频次[WOS]:1
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/788039 |
专题 | 理学院_物理系 |
作者单位 | 1.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong 999077, Peoples R China 2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 3.Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China 4.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 5.Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China 6.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China |
推荐引用方式 GB/T 7714 |
Basit, Abdul,Hussain, Tanveer,Li, Xin,et al. Thermoelectric Transport Performance in p-Type AgSbTe2-Based Materials through Entropy Engineering[J]. ACS APPLIED MATERIALS & INTERFACES,2024,16(24).
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APA |
Basit, Abdul.,Hussain, Tanveer.,Li, Xin.,Xin, Jiwu.,Zhang, Bin.,...&Dai, Ji-Yan.(2024).Thermoelectric Transport Performance in p-Type AgSbTe2-Based Materials through Entropy Engineering.ACS APPLIED MATERIALS & INTERFACES,16(24).
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MLA |
Basit, Abdul,et al."Thermoelectric Transport Performance in p-Type AgSbTe2-Based Materials through Entropy Engineering".ACS APPLIED MATERIALS & INTERFACES 16.24(2024).
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条目包含的文件 | 条目无相关文件。 |
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