Sub-5 nm Ultrathin In₂O₃ Transistors for High-Performance and Low-Power Electronic Applications

Xu, Linqiang1,2,3; Xu, Lianqiang4; Lan, Jun5; Li, Yida5; Li, Qiuhui1,2; Wang, Aili6,7; Guo, Ying8; Ang, Yee Sin3; Quhe, Ruge9,10; Lu, Jing1,2,11,12,13,14

2024-04-27

10.1021/acsami.4c01353

ACS APPLIED MATERIALS & INTERFACES   影响因子和分区

1944-8244

1944-8252

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium oxide (In2O3) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (10(4) mu A/mu m) and transconductance (4000 mu S/mu m). Here, we employ ab initio quantum transport simulation to investigate the performance limit of sub-5 nm gate length (L-g) ultrathin In2O3 FETs. Based on the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, the scaling limit of ultrathin In2O3 FETs can reach 2 nm in terms of on-state current, delay time, and power dissipation. The wide bandgap nature of ultrathin In2O3 (3.0 eV) renders it a suitable candidate for ITRS low-power (LP) electronics with L-g down to 3 nm. Notably, both the HP and LP ultrathin In2O3 FETs exhibit superior energy-delay products as compared to those of other common 2D semiconductors such as monolayer MoS2 and MoTe2. These findings unveil the potential of ultrathin In2O3 in HP and LP nanoelectronic device applications.

ultrathin In2O3 wide bandgap sub-5 nm gate length ab initio quantum transport simulation high-performance and low-power electronics

SCI ; EI

英语

其他

Ministry of Science and Technology of China["2022YFA1203904","2022YFA1200072"] ; National Natural Science Foundation of China["62174074","91964101","12274002","12164036"] ; Natural Science Foundation of Ningxia of China[2020AAC03271] ; Shenzhen Fundamental Research Program[JCYJ20220530115014032] ; Zhujiang Young Talent Program[2021QN02X362] ; Guangdong Provincial Department of Education Innovation Team Program["2021KCXTD012","22-SIS-SMU-054"] ; SUTD-ZJU Thematic Research Grant (SUTD-ZJU (TR))[202203]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:001242041400001

AMER CHEMICAL SOC

Web of Science

1.Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
2.Peking Univ, Dept Phys, Beijing 100871, Peoples R China
3.Singapore Univ Technol & Design SUTD, Sci Math & Technol, Singapore 487372, Singapore
4.Ningxia Normal Univ, Engn Res Ctr Nanostruct & Funct Mat, Sch Phys & Elect Informat Engn, Guyuan 756000, Peoples R China
5.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
6.Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China
7.Zhejiang Univ, Zhejiang Univ Univ Illinois Urbana Champaign Inst, Haining 314400, Peoples R China
8.Shaanxi Univ Technol, Sch Phys & Telecommun Engn, Shaanxi Key Lab Catalysis, Hanzhong 723001, Peoples R China
9.Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
10.Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
11.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
12.Beijing Key Lab Magnetoelect Mat & Devices, Beijing 100871, Peoples R China
13.Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226000, Peoples R China
14.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

Xu, Linqiang,Xu, Lianqiang,Lan, Jun,et al. Sub-5 nm Ultrathin In₂O₃ Transistors for High-Performance and Low-Power Electronic Applications[J]. ACS APPLIED MATERIALS & INTERFACES,2024,16(18).

Xu, Linqiang.,Xu, Lianqiang.,Lan, Jun.,Li, Yida.,Li, Qiuhui.,...&Lu, Jing.(2024).Sub-5 nm Ultrathin In₂O₃ Transistors for High-Performance and Low-Power Electronic Applications.ACS APPLIED MATERIALS & INTERFACES,16(18).

Xu, Linqiang,et al."Sub-5 nm Ultrathin In₂O₃ Transistors for High-Performance and Low-Power Electronic Applications".ACS APPLIED MATERIALS & INTERFACES 16.18(2024).