题名 | Very Stable and Efficient Tandem Quantum-Dot Light-Emitting Diodes Enabled by IZO-Based Interconnecting Layers |
作者 | |
通讯作者 | Chen, Shuming |
发表日期 | 2024-06-04
|
DOI | |
发表期刊 | |
ISSN | 1530-6984
|
EISSN | 1530-6992
|
卷号 | 24期号:24 |
摘要 | Theoretically, tandem quantum-dot light-emitting diodes (QLEDs) hold great promise for achieving both high efficiency and high stability in display applications. However, in practice, their operational stability remains considerably inferior to that of state-of-the-art devices. In this study, we developed a new tandem structure with optimal electrical and optical performance to simultaneously improve the efficiency and stability of tandem QLEDs. Electrically, upon development of a barrier-free interconnecting layer enabled by an indium-zinc oxide bridging layer and a conductive ZnMgO layer, the driving voltage of the tandem QLEDs is remarkably reduced. Optically, upon development of a top-emitting structure and optimization of the cavity length guided by a theoretical simulation, a maximum light extraction efficiency is achieved. As a result, the red tandem QLEDs exhibit a maximum external quantum efficiency of 49.01% and a T-95 lifetime at 1000 cd/m(2) of >50 000 h, making them one of the most efficient and stable QLEDs ever reported. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | Science and Technology Foundation of Shenzhen City[62174075]
; National Natural Science Foundation of China["JCYJ20210324105400002","JCYJ20220530113809022","JCYJ20230807093604009"]
|
WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
|
WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:001239421200001
|
出版者 | |
ESI学科分类 | MATERIALS SCIENCE
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:5
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/788219 |
专题 | 工学院_电子与电气工程系 |
作者单位 | Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Yuan, Cuixia,Chen, Zinan,Tian, Fengshou,et al. Very Stable and Efficient Tandem Quantum-Dot Light-Emitting Diodes Enabled by IZO-Based Interconnecting Layers[J]. NANO LETTERS,2024,24(24).
|
APA |
Yuan, Cuixia,Chen, Zinan,Tian, Fengshou,&Chen, Shuming.(2024).Very Stable and Efficient Tandem Quantum-Dot Light-Emitting Diodes Enabled by IZO-Based Interconnecting Layers.NANO LETTERS,24(24).
|
MLA |
Yuan, Cuixia,et al."Very Stable and Efficient Tandem Quantum-Dot Light-Emitting Diodes Enabled by IZO-Based Interconnecting Layers".NANO LETTERS 24.24(2024).
|
条目包含的文件 | 条目无相关文件。 |
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