Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Meng, Kui1,2; Li, Zeya1,2; Chen, Peng1,2; Ma, Xingyue1,2; Huang, Junwei1,2; Li, Jiayi1,2; Qin, Feng1,2; Qiu, Caiyu1,2; Zhang, Yilin1,2; Zhang, Ding3,4; Deng, Yu1,2; Yang, Yurong1,2; Gu, Genda5; Hwang, Harold Y.6,7,8; Xue, Qi-Kun3,4,9; Cui, Yi6,7,10; Yuan, Hongtao1,2

2024-05-01

10.1038/s41565-024-01675-5

NATURE NANOTECHNOLOGY   影响因子和分区

1748-3387

1748-3395

Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 mu F cm(-2) (with an equivalent oxide thickness of similar to 0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS2 transistors exhibiting high on/off current ratios over 10(8), ultralow subthreshold swing of 65 mV dec(-1) and ultralow leakage current density of similar to 10(-6) A cm(-2). Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing similar to 167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor-insulator transition at the clean-limit Bi2Sr2CaCu2O8+delta can also be realized through fluoride gating. Our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.

SCI ; EI

英语

通讯

National Natural Science Foundation of China (National Science Foundation of China)["92365203","52072168"] ; National Natural Science Foundation of China[2021YFA1202901] ; US Department of Energy, Office of Basic Energy Sciences[DE-AC02-76SF00515]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:001223853900002

NATURE PORTFOLIO

20242016101603

Calcium compounds ; Computer circuits ; Copper compounds ; Dielectric materials ; Diffusion barriers ; Energy utilization ; Gate dielectrics ; Layered semiconductors ; Molybdenum compounds ; Rare earths ; Strontium compounds ; Transition metals

Energy Utilization:525.3 ; Metallurgy and Metallography:531 ; Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Circuits:721.3 ; Inorganic Compounds:804.2

Web of Science

1.Nanjing Univ, Coll Engn & Appl Sci, Jiangsu Key Lab Artificial Funct Mat, Natl Lab Solid State Microstruct, Nanjing, Peoples R China
2.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing, Peoples R China
3.Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing, Peoples R China
4.Tsinghua Univ, Dept Phys, Beijing, Peoples R China
5.Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY USA
6.SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
7.Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
8.Stanford Univ, Dept Appl Phys, Stanford, CA USA
9.Southern Univ Sci & Technol, Dept Phys, Shenzhen, Peoples R China
10.Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

Meng, Kui,Li, Zeya,Chen, Peng,et al. Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics[J]. NATURE NANOTECHNOLOGY,2024,19:932-940.

Meng, Kui.,Li, Zeya.,Chen, Peng.,Ma, Xingyue.,Huang, Junwei.,...&Yuan, Hongtao.(2024).Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics.NATURE NANOTECHNOLOGY,19,932-940.

Meng, Kui,et al."Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics".NATURE NANOTECHNOLOGY 19(2024):932-940.