Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Sun, Weideng1,2,3; Zhang, Yike1,2,3; Cao, Kaihua4; Lu, Shiyang4; Du, Ao4; Huang, Haoliang5,6,7; Zhang, Sen8; Hu, Chaoqun9,10; Feng, Ce1,2,3; Liang, Wenhui1,2,3; Liu, Quan1,2,3; Mi, Shu1,2,3; Cai, Jianwang9,10; Lu, Yalin5,6; Zhao, Weisheng4; Zhao, Yonggang1,2,3

2024-04-05

10.1126/sciadv.adj8379

SCIENCE ADVANCES   影响因子和分区

2375-2548

Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg1/3Nb2/3)(0.7)Ti0.3O3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non-in-plane magnetic anisotropy.

SCI ; EI

英语

其他

Science Center of the National Natural Science Foundation of China[52388201] ; National Key R&D Program of China[2023YFA1406400] ; National Natural Science Foundation of China["52172270","51831005","12074429"] ; Programme of Guangdong Province, China[2021B0301030003]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:001198102900001

AMER ASSOC ADVANCEMENT SCIENCE

Web of Science

1.Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
2.Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
3.Tsinghua Univ, Frontier Sci Ctr Quantum Informat, Beijing 100084, Peoples R China
4.Beihang Univ, Fert Beijing Inst, Sch Integrated Circuit Sci & Engn, Beijing 100191, Peoples R China
5.Univ Sci & Technol China, Anhui Lab Adv Photon Sci & Technol, Hefei 230026, Peoples R China
6.Univ Sci & Technol China, Hefei Natl Res Ctr Phys Sci Microscale, Hefei 230026, Peoples R China
7.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
8.Natl Univ Def Technol, Coll Sci, Changsha 410073, Peoples R China
9.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
10.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China

Sun, Weideng,Zhang, Yike,Cao, Kaihua,et al. Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers[J]. SCIENCE ADVANCES,2024,10(14).

Sun, Weideng.,Zhang, Yike.,Cao, Kaihua.,Lu, Shiyang.,Du, Ao.,...&Zhao, Yonggang.(2024).Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers.SCIENCE ADVANCES,10(14).

Sun, Weideng,et al."Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers".SCIENCE ADVANCES 10.14(2024).