南方科技大学知识苑(SUSTech KC): Study on the effects of Si-doping in molecular beam heteroepitaxial Î²-Ga<sub>2</sub>O<sub>3</sub> films

题名	Study on the effects of Si-doping in molecular beam heteroepitaxial Î²-Ga₂O₃ films
作者	Zhan, Jiali1,2 ; Wu, Ying 1; Zeng, Xiaohong 1; Feng, Boyuan 3; He, Minghao 2 ; He, Gaohang 3; Ding, Sunan 1
通讯作者	Wu, Ying; He, Gaohang; Ding, Sunan
发表日期	2024-03-14
DOI	10.1063/5.0190926
发表期刊	JOURNAL OF APPLIED PHYSICS 影响因子和分区
ISSN	0021-8979
EISSN	1089-7550
卷号	135 期号:10
摘要	beta-Ga(2)O(3)3, an emerging wide bandgap semiconductor material, holds significant potential for various applications. However, challenges persist in improving the crystal quality and achieving controllable doping of beta-Ga2O3. In particular, the relationship between these factors and the mechanisms behind them are not fully understood. Molecular beam epitaxy (MBE) is viewed as one of the most sophisticated techniques for growing high-quality crystalline films. It also provides a platform for studying the effects of doping and defects in heteroepitaxial beta-Ga2O3. In our study, we tackled the issue of Si source passivation during the MBE growth of Si-doped beta-Ga2O3. We did this by using an electron beam vaporize module, a departure from the traditional Si effusion cell. Our research extensively explores the correlation between Si doping concentration and film properties. These properties include microstructure, morphology, defects, carrier conductivity, and mobility. The results from these investigations are mutually supportive and indicate that a high density of defects in heteroepitaxial beta-Ga(2)O(3)3 is the primary reason for the challenges in controllable doping and conductivity. These insights are valuable for the ongoing development and enhancement of beta-Ga2O3-based device techniques. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial 4.0International (CC BY-NC) license (https://creativecommons.org/licenses/by-nc/4.0/)
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
资助项目	Chinese Academy of Science[62174171]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001198403800002
出版者	AIP Publishing
ESI学科分类	PHYSICS
来源库	Web of Science
引用统计	被引频次[WOS]：2
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/788719
专题	工学院_深港微电子学院
作者单位	1.Nanjing Univ, Sch Integrated Circuits, Suzhou 215163, Peoples R China 2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518071, Peoples R China 3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstat Nano X, Suzhou 215123, Peoples R China
第一作者单位	深港微电子学院
推荐引用方式 GB/T 7714	Zhan, Jiali,Wu, Ying,Zeng, Xiaohong,et al. Study on the effects of Si-doping in molecular beam heteroepitaxial Î²-Ga₂O₃ films[J]. JOURNAL OF APPLIED PHYSICS,2024,135(10).
APA	Zhan, Jiali.,Wu, Ying.,Zeng, Xiaohong.,Feng, Boyuan.,He, Minghao.,...&Ding, Sunan.(2024).Study on the effects of Si-doping in molecular beam heteroepitaxial Î²-Ga₂O₃ films.JOURNAL OF APPLIED PHYSICS,135(10).
MLA	Zhan, Jiali,et al."Study on the effects of Si-doping in molecular beam heteroepitaxial Î²-Ga₂O₃ films".JOURNAL OF APPLIED PHYSICS 135.10(2024).