Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

He, JiaQi1,2; Wang, PeiRan1; Du, FangZhou1; Wen, KangYao1; Jiang, Yang1; Tang, ChuYing1; Deng, ChenKai1; Li, MuJun1; Hu, QiaoYu1; Tao, Nick3; Xiang, Peng4; Cheng, Kai4; Wang, Qing1,5; Li, Gang2; Yu, HongYu1,5

2024-03-25

10.1063/5.0193734

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

This work develops a regrown fishbone trench (RFT) structure in selective area growth (SAG) technique to fabricate recessed-gate normally off GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The RFT structure effectively modulates the electric field at high drain and gate biases, thus allowing the device to feature improved off-state and gate breakdown performance with a high positive V-th of 2 V. The simulated carrier concentration and electric field distributions reveal the mechanism of electric field weakening by RFT architecture. Meanwhile, the current collapse phenomenon is significantly suppressed, and the gate voltage swing is also enlarged. The maximum gate drive voltage of 9.2 V for 10-year reliability of RFT GaN MIS-HEMT, together with the improved linearity and block voltage, broadens the applications of SAG devices. Furthermore, the RFT structure also provides an etching-free method for fabricating normally off GaN MIS-HEMTs with multi-dimensional gates.

SCI ; EI

英语

第一 ; 通讯

Physics

Physics, Applied

WOS:001190846800007

AIP Publishing

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
2.Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China
3.Maxscend Microelect Co Ltd, Wuxi 214072, Peoples R China
4.Enkris Semicond Inc, Suzhou 215123, Peoples R China
5.Southern Univ Sci & Technol, Engn Res Ctr Integrated Circuits Next Generat Comm, Minist Educ, Shenzhen 518055, Peoples R China

He, JiaQi,Wang, PeiRan,Du, FangZhou,et al. Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench[J]. APPLIED PHYSICS LETTERS,2024,124(13).

He, JiaQi.,Wang, PeiRan.,Du, FangZhou.,Wen, KangYao.,Jiang, Yang.,...&Yu, HongYu.(2024).Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench.APPLIED PHYSICS LETTERS,124(13).

He, JiaQi,et al."Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench".APPLIED PHYSICS LETTERS 124.13(2024).