| 题名 | Design of multi-channel heterostructures for GaN devices |
| 作者 | |
| 通讯作者 | Hua, Mengyuan; Ma, Jun |
| 发表日期 | 2024-03-01
|
| DOI | |
| 发表期刊 | |
| ISSN | 0021-4922
|
| EISSN | 1347-4065
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| 卷号 | 63期号:3 |
| 摘要 | The emerging multi-channel GaN architecture offers great opportunities in high-performance devices, whose performance is fundamentally determined by the density and distribution of electrons among the parallel multi-channels. In this work, we present approaches to design multi-channel GaN heterostructures based on a proposed physical-based model and experimental results. The model presents excellent accuracy based on comparisons with TCAD and experimental results. Impacts of key designing parameters upon the two-dimensional electron gas density and the distribution of electrons were systematically investigated within undoped and doped multi-channels, presenting a criterion to determine the maximum channel thickness and evaluate the multi-channel design, and offering a design guideline to design and optimize a multi-channel-GaN heterostructure for a given targeted application. |
| 关键词 | |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| 资助项目 | National Natural Science Foundation of Chinahttps://doi.org/10.13039/501100001809[62104092]
; National Natural Science Foundation[2021A1515011952]
; Shenzhen-Hong Kong-Macau Science and Technology Program[SGDX2020110309460101]
|
| WOS研究方向 | Physics
|
| WOS类目 | Physics, Applied
|
| WOS记录号 | WOS:001188546000001
|
| 出版者 | |
| ESI学科分类 | PHYSICS
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：1
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/788908 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 2.Enkris Semicond Inc, Suzhou 215123, Peoples R China |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Tang, Jinjin,Zou, Wensong,Xiang, Peng,et al. Design of multi-channel heterostructures for GaN devices[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2024,63(3).
|
| APA |
Tang, Jinjin,Zou, Wensong,Xiang, Peng,Cheng, Kai,Hua, Mengyuan,&Ma, Jun.(2024).Design of multi-channel heterostructures for GaN devices.JAPANESE JOURNAL OF APPLIED PHYSICS,63(3).
|
| MLA |
Tang, Jinjin,et al."Design of multi-channel heterostructures for GaN devices".JAPANESE JOURNAL OF APPLIED PHYSICS 63.3(2024).
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| 条目包含的文件 | 条目无相关文件。 | |||||
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