南方科技大学知识苑(SUSTech KC): Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD-Grown Monolayer MoS<sub>2</sub> Transistors

题名	Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD-Grown Monolayer MoS₂ Transistors
作者	Feng, Xuewei 1; Yu, Zhi Gen 2; Guo, Haoyue3 ; Li, Yida3 ; Zhang, Yong-Wei 2; Ang, Kah-Wee 4
通讯作者	Feng, Xuewei; Ang, Kah-Wee
发表日期	2024-03-01
DOI	10.1002/aelm.202300820
发表期刊	ADVANCED ELECTRONIC MATERIALS 影响因子和分区
ISSN	2199-160X
摘要	Two-dimensional Materials (2DMs) offer significant promise for advancing device miniaturization and extending Moore's law. Despite the challenges posed by high contact resistance in transistors, recent discoveries highlight semimetals as an effective approach for achieving ohmic contact with near-quantum-limit contact resistance. The energy band hybridization between semimetal and MoS2 is found to create degenerate states and heavily doped contact, which is proposed as the underlying mechanism responsible for reducing contact resistance. However, a quantitative and comprehensive characterization of the semimetal-MoS2 interface is lacking, leaving the physical interactions elusive. This study reveals that semimetals induce n-type doping and tensile strain in monolayer MoS2 grown using CVD, which serve as the contact resistance and mobility boosters. Among the semimetals investigated, including Bismuth (Bi), Antimony (Sb), and their alloy, Bi results in the highest electron doping of 2 x 10(13) cm(-2) and a 0.5% tensile strain, leading to reduced contact resistance and enhanced mobility. First-principles calculations and spectroscopy measurements unveil the impact of electron doping and strain in MoS2, and the thermal effects are subsequently explored. This research underscores the potential of semimetals in boosting device performance and lays the foundation for reducing contact resistance in transistors made from 2D materials.
关键词	contact MoS2 semimetal thermal annealing transistor
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
资助项目	Shenzhen Fundamental Research Program[JCYJ20220530115014032] ; Zhujiang Young Talent Program[2021QN02X362] ; Guangdong Provincial Department of Education Innovation Team Program[2021KCXTD012] ; National Research Foundation, Singapore[NRF-CRP24-2020-0002] ; null[62304132] ; null[62174074]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001179798600001
出版者	WILEY
来源库	Web of Science
引用统计
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/788928
专题	工学院_深港微电子学院
作者单位	1.Shanghai Jiao Tong Univ, Sch Mech Engn, 800 Dong Chuan Rd, Shanghai 200240, Peoples R China 2.ASTAR, Inst High Performance Comp IHPC, 1 Fusionopolis Way,16-16 Connexis, Singapore 138632, Singapore 3.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China 4.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore
推荐引用方式 GB/T 7714	Feng, Xuewei,Yu, Zhi Gen,Guo, Haoyue,et al. Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD-Grown Monolayer MoS₂ Transistors[J]. ADVANCED ELECTRONIC MATERIALS,2024.
APA	Feng, Xuewei,Yu, Zhi Gen,Guo, Haoyue,Li, Yida,Zhang, Yong-Wei,&Ang, Kah-Wee.(2024).Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD-Grown Monolayer MoS₂ Transistors.ADVANCED ELECTRONIC MATERIALS.
MLA	Feng, Xuewei,et al."Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD-Grown Monolayer MoS₂ Transistors".ADVANCED ELECTRONIC MATERIALS (2024).