Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn₂P₂S₆ Semiconductor for Polarization-Sensitive Photodetection

Li, Dong1; Qin, Jing-Kai1,2; Zhu, Bingxuan1; Yue, Ling-Qing1; Huang, Pei-Yu1; Zhu, Chengyi1; Zhou, Feichi4; Zhen, Liang1,3; Xu, Cheng-Yan1,3

2024-03-18

10.1021/acsnano.4c00382

ACS NANO   影响因子和分区

1936-0851

1936-086X

A two-dimensional (2D) ferroelectric semiconductor, which is coupled with photosensitivity and room-temperature ferroelectricity, provides the possibility of coordinated conductance modulation by both electric field and light illumination and is promising for triggering the revolution of optoelectronics for monolithic multifunctional integration. Here, we report that semiconducting Sn2P2S6 crystals can be achieved in a 2D morphology using a chemical vapor transport approach with the assistant of space confinement and experimentally demonstrate the robust ferroelectricity in atomic-thin Sn2P2S6 nanosheet at room temperature. The intercorrelated programming of ferroelectric order along out-of-plane (OOP) and in-plane (IP) directions enables a tunable bulk photovoltaic (BPV) effect through multidirectional electrical control. By combining the capability of anisotropic in-plane optical absorption, a highly integrated Sn2P2S6 optoelectronic device vertically sandwiched with graphene electrodes yields the polarization-dependent open-circuit photovoltage with a dichroic ratio of 2.0 under 405 nm light illumination. The reintroduction of ferroelectric Sn2P2S6 to the 2D asymmetric semiconductor family provides possibilities to hardware implement of the self-powered polarization-sensitive photodetection and spotlights the promising applications for next-generation photovoltaic devices.

2D ferroelectric semiconductor ferroelectricity coordination in-plane anisotropy bulk photovoltaic effect polarization sensitivity

SCI ; EI

英语

其他

National Natural Science Foundation of China[2023YFB2806300] ; National Key Research and Development Project of China["52102161","62104091","52273246"] ; National Natural Science Foundation of China["RCYX20221008092912045","RCJC20210706091950025"] ; Shenzhen Science and Technology Program[2022A1515011064] ; Guangdong Natural Science Foundation[JCYJ20220530115204009]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:001187243800001

AMER CHEMICAL SOC

Web of Science

1.Harbin Inst Technol Shenzhen, Sch Mat Sci & Engn, Sauvage Lab Smart Mat, Shenzhen 518055, Peoples R China
2.Harbin Inst Technol Shenzhen, Sch Integrated Circuits, Shenzhen 518055, Peoples R China
3.Harbin Inst Technol, MOE, Key Lab Microsyst & Microstruct Mfg, Harbin 150080, Peoples R China
4.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China

Li, Dong,Qin, Jing-Kai,Zhu, Bingxuan,et al. Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn₂P₂S₆ Semiconductor for Polarization-Sensitive Photodetection[J]. ACS NANO,2024,18(13).

Li, Dong.,Qin, Jing-Kai.,Zhu, Bingxuan.,Yue, Ling-Qing.,Huang, Pei-Yu.,...&Xu, Cheng-Yan.(2024).Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn₂P₂S₆ Semiconductor for Polarization-Sensitive Photodetection.ACS NANO,18(13).

Li, Dong,et al."Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn₂P₂S₆ Semiconductor for Polarization-Sensitive Photodetection".ACS NANO 18.13(2024).