Transmittance contrast-induced photocurrent: A general strategy for self-powered photodetectors based on MXene electrodes

Ma, Hailong1; Fang, Huajing1,5; Li, Jiaqi1; Li, Ziqing2; Fang, Xiaosheng2,6; Wang, Hong3,4,7,8

2024-05-01

10.1002/inf2.12540

INFOMAT   影响因子和分区

2567-3165

The regulation of carrier generation and transport by Schottky junctions enables effective optoelectronic conversion in optoelectronic devices. A simple and general strategy to spontaneously generate photocurrent is of great significance for self-powered photodetectors but is still being pursued. Here, we propose that a photocurrent can be induced at zero bias by the transmittance contrast of MXene electrodes in MXene/semiconductor Schottky junctions. Two MXene electrodes with a large transmittance contrast (84%) between the thin and thick zones were deposited on the surface of a semiconductor wafer using a simple and robust solution route. Kelvin probe force microscopy tests indicated that the photocurrent at zero bias could be attributed to asymmetric carrier generation and transport between the two Schottky junctions under illumination. As a demonstration, the MXene/GaN ultraviolet (UV) photodetector exhibits excellent performance superior to its counterpart without transmittance contrast, including high responsivity (81 mA W-1), fast response speed (less than 31 and 29 ms) and ultrahigh on/off ratio (1.33 x 10(6)), and good UV imaging capability. Furthermore, this strategy has proven to be universal for first- to third-generation semiconductors such as Si and GaAs. These results provide a facile and cost-effective route for high-performance self-powered photodetectors and demonstrate the versatile and promising applications of MXene electrodes in optoelectronics.

GaN MXene Schottky junction self-powered photodetector transmittance contrast

SCI

英语

通讯

Guangdong Provincial Key Laboratory Program[2021B1212040001] ; Shenzhen Science and Technology Program[KQTD20180411143514543] ; Shenzhen DRC project[[2018]1433] ; null[51902250]

Materials Science

Materials Science, Multidisciplinary

WOS:001180633400001

WILEY

Web of Science

1.Xi An Jiao Tong Univ, Ctr Adv Mat Performance Nanoscale CAMP Nano, State Key Lab Mech Behav Mat, Xian, Peoples R China
2.Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen Engn Res Ctr Novel Elect Informat Mat & D, Shenzhen, Peoples R China
5.Xi An Jiao Tong Univ, Ctr Adv Mat Performance Nanoscale CAMP Nano, State Key Lab Mech Behav Mat, Huajing Fang, Xian 710049, Peoples R China
6.Fudan Univ, Inst Optoelect, Dept Mat Sci, Shanghai 200433, Peoples R China
7.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
8.Southern Univ Sci & Technol, Shenzhen Engn Res Ctr Novel Elect Informat Mat & D, Shenzhen 518055, Peoples R China

Ma, Hailong,Fang, Huajing,Li, Jiaqi,et al. Transmittance contrast-induced photocurrent: A general strategy for self-powered photodetectors based on MXene electrodes[J]. INFOMAT,2024,6(5).

Ma, Hailong,Fang, Huajing,Li, Jiaqi,Li, Ziqing,Fang, Xiaosheng,&Wang, Hong.(2024).Transmittance contrast-induced photocurrent: A general strategy for self-powered photodetectors based on MXene electrodes.INFOMAT,6(5).

Ma, Hailong,et al."Transmittance contrast-induced photocurrent: A general strategy for self-powered photodetectors based on MXene electrodes".INFOMAT 6.5(2024).