Epitaxial Growth of Large-Scale 2D CrTe₂ Films on Amorphous Silicon Wafers With Low Thermal Budget

Zhang, Xiaoqian1,2,3; Li, Yue4; Lu, Qiangsheng5,6; Xiang, Xueqiang7; Sun, Xiaozhen7; Tang, Chunli8; Mahdi, Muntasir8; Conner, Clayton5; Cook, Jacob5; Xiong, Yuzan9; Inman, Jerad9,15; Jin, Wencan8,10; Liu, Chang1,2; Cai, PeiYu11; Santos, Elton J. G.11,12,13; Phatak, Charudatta4,14; Zhang, Wei9,15; Gao, Nan7; Niu, Wei16; Bian, Guang5; Li, Peng7; Yu, Dapeng1,2; Long, Shibing7

2024-06-01

10.1002/adma.202311591

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 degrees C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Neel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 x 10(7) h/2e Omega(1) m(1)), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

2D magnetic thin films amorphous substrates low thermal budget Neel-type domain dynamics spin-orbit torque

SCI ; EI

英语

第一

U.S. NSF[ECCS-2246254] ; National Natural Science Foundation of China[92365113] ; National Key Research and Development Program of China[2023YFA1406603] ; Gordon and Betty Moore Foundation[DOI:10.37807/gbmf12247] ; China Postdoctoral Science Foundation[2021M701590] ; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences[DE-AC02-06CH11357] ; EPSRC Open Fellowship[EP/T021578/1] ; China Scholarship Council[202208060246] ; EPSRC["EP/P020267/1","d429"] ; null[DMR-2129879]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:001178736500001

WILEY-V C H VERLAG GMBH

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Southeast Univ, Sch Phys, Key Lab Quantum Mat & Devices, Minist Educ, Nanjing 211189, Peoples R China
4.Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA
5.Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
6.Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
7.Univ Sci & Technol China, Sch Microelect, Hefei 230026, Peoples R China
8.Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
9.Univ North Carolina Chapel Hill, Dept Phys & Astron, Chapel Hill, NC 27599 USA
10.Auburn Univ, Dept Phys, Auburn, AL 36849 USA
11.Univ Edinburgh, Inst Condensed Matter Phys & Complex Syst, Sch Phys & Astron, Edinburgh EH9 3FD, Scotland
12.Univ Edinburgh, Higgs Ctr Theoret Phys, Edinburgh EH9 3FD, Scotland
13.Donostia Int Phys Ctr DIPC, Donostia San Sebastian 20018, Basque Country, Spain
14.Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
15.Oakland Univ, Dept Phys, Rochester, MI 48309 USA
16.Nanjing Univ Posts & Telecommun, Sch Sci, Nanjing 210023, Peoples R China

Zhang, Xiaoqian,Li, Yue,Lu, Qiangsheng,et al. Epitaxial Growth of Large-Scale 2D CrTe₂ Films on Amorphous Silicon Wafers With Low Thermal Budget[J]. ADVANCED MATERIALS,2024,36(24).

Zhang, Xiaoqian.,Li, Yue.,Lu, Qiangsheng.,Xiang, Xueqiang.,Sun, Xiaozhen.,...&Long, Shibing.(2024).Epitaxial Growth of Large-Scale 2D CrTe₂ Films on Amorphous Silicon Wafers With Low Thermal Budget.ADVANCED MATERIALS,36(24).

Zhang, Xiaoqian,et al."Epitaxial Growth of Large-Scale 2D CrTe₂ Films on Amorphous Silicon Wafers With Low Thermal Budget".ADVANCED MATERIALS 36.24(2024).