南方科技大学知识苑(SUSTech KC): A lateral interleaved P-well/N-well photodetector with enhanced transit-time bandwidth in 28-nm CMOS

题名	A lateral interleaved P-well/N-well photodetector with enhanced transit-time bandwidth in 28-nm CMOS
作者	D. Zhou; H. Wang; D. Zhan; Q. Pan
DOI	10.1049/icp.2023.2099
发表日期	2023-10-05
ISBN	978-1-83953-926-8
会议录名称	49th European Conference on Optical Communications (ECOC 2023)
卷号	2023
会议日期	1-5 Oct. 2023
会议地点	Hybrid Conference, Glasgow, UK
摘要	A transit-time-enhanced silicon photodetector is proposed and fabricated in standard CMOS without process modification. By adopting the lateral interleaved junction, this PD features a 0.13-A/W responsivity and a doubled 10.43-GHz transient-time bandwidth. Moreover, a clear 10-Gb/s 850-nm optical eye diagram is observed.
学校署名	第一
相关链接	[IEEE记录]
引用统计
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/789099
专题	工学院_深港微电子学院
作者单位	School of Microelectronics, Southern University of Science and Technology, Shenzhen, People's Republic of China
第一作者单位	深港微电子学院
第一作者的第一单位	深港微电子学院
推荐引用方式 GB/T 7714	D. Zhou,H. Wang,D. Zhan,et al. A lateral interleaved P-well/N-well photodetector with enhanced transit-time bandwidth in 28-nm CMOS[C],2023.