Strain Engineering for Modulating Electronic and Optoelectronic Properties of Monolayer InSe

Siyuan Xu1; Tuobei Sun2,3; Junfeng Li1; Tao Lin4; Huiru Yang1,5; Huaiyu Ye2

10.1109/ICEPT59018.2023.10492023

2023-08-11

2836-9734

979-8-3503-3882-9

2023 24th International Conference on Electronic Packaging Technology (ICEPT)

8-11 Aug. 2023

Shihezi City, China

This work provides valuable insights into the potential of strain engineering for tailoring the electronic and optoelectronic properties of monolayer InSe. The bandgap of monolayer InSe can be modified through strain engineering, where tensile strain leads to a decreased bandgap value and a potential transition from a semiconductor to a conductor, while compressive strain initially increases the bandgap to a maximum value before decreasing back to its original value. The findings suggest that mechanical deformation can effectively modify InSe’s electronic structure, providing a promising avenue for developing high-performance optoelectronic devices with tunable properties. Furthermore, this work proved strain engineering can effectively modify the optoelectronic properties of monolayer InSe, such as absorption coefficient, reflectivity, conductivity, and loss function. Specifically, compressive strain can significantly increase the peak value of these properties, while tensile strain can increase their average value in the visible light and infrared range. These results demonstrate the importance of considering strain effects when designing next-generation 2D-based devices and highlight InSe as a promising candidate for the optoelectronic devices.

第一

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Joint Lab for Advanced Semiconductor Packaging Technologies; Joint Lab for Advanced Packaging and Testing Technology of Integrated Circuits; School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
3.Nanjing Moli Semiconductor Co.Ltd, Nanjing, China
4.ShenZhen PhasedCom Communication Technology Co.,Ltd., Shenzhen, China
5.Harbin Institute of Technology, Harbin, China

Siyuan Xu,Tuobei Sun,Junfeng Li,et al. Strain Engineering for Modulating Electronic and Optoelectronic Properties of Monolayer InSe[C],2023.