Analysis of Metallization Effects of Pressure-Assisted Cu Nanoparticle Sintering on DBC by Experiment and Nanoscale Simulation

Shizhen Li1; Jing Jiang2; Xu Liu3; Shaogang Wang3; Zhonghua Zhang4; Huaiyu Ye1

10.1109/ICEPT59018.2023.10492230

2023-08-11

2836-9734

979-8-3503-3882-9

2023 24th International Conference on Electronic Packaging Technology (ICEPT)

8-11 Aug. 2023

Shihezi City, China

Substrate metallization is a crucial factor affecting the mechanical properties of sintered nanoparticles in microelectronics applications, as it is essential for ensuring good adhesion between the substrate and the sintered material. In this study, we investigated the influence of metallization on pressure-assisted nanocopper sintering and analyzed the related mechanism of interaction using experiments and molecular dynamics simulation. In the first session, we bonded dummy dies on various substrates, including bare Cu, and substrates with Ag or Au metallization by nanocopper pressure-assisted sintering. The mechanical properties of the bonding layers were estimated using shear strength and SEM image analysis of fracture and cross-section morphologies under different sintering conditions. We found that the group of Cu-bare Cu have better bonding strength as the sintering temperature or assisted pressure is not high enough. However, as more energy input to the bonding layer, such as higher temperature or larger sintering pressure, the mechanical performance showed a significant increase. In the second session, a sintering model, which contained a single nanoparticle and substrate, was built to illustrate the effects of metallization from the perspective of solid-state wetting. The contact angle was estimated using a creative method, and the crystallization structure evolutions under different sintering conditions were analyzed. We found that the lattice boundary generated as the Cu nanoparticle coalescence with Ag or Au substrate, which may decrease the bonding strength. However, for Ag and Au metallization, limited interface diffusion can be observed at the neck region, where a few numbers of substrate atoms transmitted toward Cu nanoparticle, and the contact area was larger than that of bare Cu substrate. Finally, a simple uniaxial stretching simulation was conducted to prove the results of sintering simulation. This study provides valuable insights into the effects of metallization on pressure-assisted nanocopper sintering, which can contribute to the optimization of mechanical properties of sintered nanoparticles in microelectronics applications.

第一

1.Joint Lab for Advanced Semiconductor Packaging Technologies; Joint Lab for Advanced Packaging and Testing Technology of Integrated Circuits; School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Academy for Engineering&Technology, Fudan University, Shanghai, China
3.Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Delft, The Netherlands
4.School of Medical Informatics, Daqing Campus, Harbin Medical University, Daqing, China

Shizhen Li,Jing Jiang,Xu Liu,et al. Analysis of Metallization Effects of Pressure-Assisted Cu Nanoparticle Sintering on DBC by Experiment and Nanoscale Simulation[C],2023.