High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer

Yang Jiang1,2; Fangzhou Du1; Kangyao Wen1; Jiaqi He1; Mujun Li1; Chuying Tang1; Yi Zhang1,2; Zhongrui Wang2; Qing Wang1; Hongyu Yu1

10.1109/ISPSD59661.2024.10579575

2024-06-06

1063-6854

979-8-3503-9483-2

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

2-6 June 2024

Bremen, Germany

This work demonstrates a high VTH (+8.4 V) and breakdown voltage (1100 V) Enhancement-mode GaN HEMTs using an $\text{Al:HfO}_{\mathrm{x}}$-based charge trapping layer (CTL). The operation mechanism is investigated through TCAD simulation, and the device performance is systematically evaluated through static and dynamic electrical measurements. Thanks to the VTHis tunable by initialization voltage, we prove that the fabricated CTL-based GaN inverters can operate under a variety of conditions ($\beta=10-40$ and $\mathrm{V}_{\text{DD}}=3$ V-15 V) with commendable output swing and noise margins. These results present a promising approach towards to realizing the monolithic integration of GaN devices for power ICs applications.

第一

EI

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong

Yang Jiang,Fangzhou Du,Kangyao Wen,et al. High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer[C],2024.