Reliability Analysis of Cu Sintered Die-Attach for SiC Power Devices: Mechanical, Electrical, and Thermal Evaluation

Xu Liu1; Shaogang Wang1; Dong Hu1; Chenshan Gao2; Qianming Huang2; Huaiyu Ye2; Paddy French1; Guoqi Zhang1

10.1109/ECTC51529.2024.00180

2024-05-31

0569-5503

979-8-3503-7599-2

2024 IEEE 74th Electronic Components and Technology Conference (ECTC)

28-31 May 2024

Denver, CO, USA

This study presents the development and characterization of a novel Cu paste for use in pressure-assisted sintering die-attach processes, applied to SiC power devices. The Cu paste was self-developed, and the sintering process was conducted at 250°C for 3 minutes under a pressure of 20 MPa. The shear strength, on-resistance, and junction-to-case thermal resistance reliability were evaluated through a 1000-hour hot temperature storage test and a 1000-cycle temperature cycling test. Initially, the Cu sintered samples display robust characteristics, boasting high shear strength (>91.8 MPa), low thermal resistance (<0.218°C/W), and minimal on-resistance (<18.44mΩ). Throughout the reliability experiments, there is no observed degradation in these critical properties. Subsequently, during temperature cycling and high-temperature storage, the shear strength demonstrates an upward trend with increasing holding time or temperature cycling, reaching over 120 MPa. The on-resistance values of the units remain stable exhibiting a negligible change rate of less than 1.3%, alongside a marginal 4% increase in thermal resistance values. The results suggest that both Cu-sintered Cu units and SiC units perform comparably to standard commercial Ag products. These findings underscore the potential of the developed Cu paste and pressure-assisted sintering process in achieving reliable die-attach solutions for SiC power devices.

其他

EI

1.Delft University of Technology, Delft, The Netherlands
2.Southern University of Science and Technology, Shenzhen, China

Xu Liu,Shaogang Wang,Dong Hu,et al. Reliability Analysis of Cu Sintered Die-Attach for SiC Power Devices: Mechanical, Electrical, and Thermal Evaluation[C],2024.