A GaN MMIC Inverse Class-F Power Amplifier Using Co-Designed Bias Network and LC Resonator

Jie Shi1; Xiaohu Fang1; Xinyu Zhou2; Xu Yan3; Wei Lin4; Luyu Zhao5

10.1109/GSMM61775.2024.10553095

2024-05-22

2380-9515

979-8-3503-8496-3

2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM)

20-22 May 2024

Hong Kong

This paper proposed a novel methodology to design compact and fully integrated inverse class-F (class-F-1) power amplifier (PA). In this method, a bias network (BN) is utilized to provide alternated open-circuit and short-circuit harmonic impedances and assist with fundamental matching. Then, a matching network (MN) formed by a parallel LC resonator is adopted to achieve isolation at 2nd harmonic and simultaneously help with impedance transformation at fundamental frequency. To validate the proposed method, a high efficiency class-F-1 PA operating at 5.8 GHz is designed using a commercial 0.25 μm GaN-on-SiC technology. Simulation results indicate that the proposed class-F-1 PA can provide a peak power-added efficiency (PAE) of 71% at saturation output power of 36.5 dBm.

第一

CPCI-S ; EI

1.School of Micro-electronics Southern University of Science and Technology, Shenzhen, China
2.The Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong, China
3.Department of Electrical and Computer Engineering, National University of Singapore, Singapore
4.Department of Electrical and Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong, China
5.School of Electronic and Information Engineering Anhui University, Hefei, China

Jie Shi,Xiaohu Fang,Xinyu Zhou,et al. A GaN MMIC Inverse Class-F Power Amplifier Using Co-Designed Bias Network and LC Resonator[C],2024.