题名 | Simultaneously Boosting Thermoelectric and Mechanical Properties of n-Type Mg3Sb1.5Bi0.5-Based Zintls through Energy-Band and Defect Engineering |
作者 | |
通讯作者 | Zheng, Shuqi; Chen, Zhi-Gang |
发表日期 | 2024-01-02
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DOI | |
发表期刊 | |
ISSN | 1936-0851
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EISSN | 1936-086X
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卷号 | 18期号:2 |
摘要 | Incorporating donor doping into Mg3Sb1.5Bi0.5 to achieve n-type conductivity is one of the crucial strategies for performance enhancement. In pursuit of higher thermoelectric performance, we herein report co-doping with Te and Y to optimize the thermoelectric properties of Mg3Sb1.5Bi0.5, achieving a peak ZT exceeding 1.7 at 703 K in Y0.01Mg3.19Sb1.5Bi0.47Te0.03. Guided by first-principles calculations for compositional design, we find that Te-doping shifts the Fermi level into the conduction band, resulting in n-type semiconductor behavior, while Y-doping further shifts the Fermi level into the conduction band and reduces the bandgap, leading to enhanced thermoelectric performance with a power factor as high as >20 mu W cm(-1) K-2. Additionally, through detailed micro/nanostructure characterizations, we discover that Te and Y co-doping induces dense crystal and lattice defects, including local lattice distortions and strains caused by point defects, and densely distributed grain boundaries between nanocrystalline domains. These defects efficiently scatter phonons of various wavelengths, resulting in a low thermal conductivity of 0.83 W m(-1) K-1 and ultimately achieving a high ZT. Furthermore, the dense lattice defects induced by co-doping can further strengthen the mechanical performance, which is crucial for its service in devices. This work provides guidance for the composition and structure design of thermoelectric materials. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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资助项目 | Australian Research Council[51871240]
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WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
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WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:001144011000001
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出版者 | |
来源库 | Web of Science
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引用统计 |
被引频次[WOS]:7
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/789382 |
专题 | 理学院_物理系 南方科技大学 |
作者单位 | 1.China Univ Petr, Coll New Energy & Mat, Beijing 102249, Peoples R China 2.Queensland Univ Technol, ARC Res Hub Zero Emiss Power Generat Carbon Neutra, Sch Chem & Phys, Brisbane, Qld 4001, Australia 3.Queensland Univ Technol, Ctr Mat Sci, Brisbane, Qld 4001, Australia 4.Univ Queensland, Sch Mech & Min Engn, Brisbane, Qld 4072, Australia 5.Southern Univ Sci & Technol, Dept Phys, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Peoples R China 6.Southern Univ Sci & Technol, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Peoples R China 7.China Univ Petr, Coll Sci, Beijing 102249, Peoples R China |
推荐引用方式 GB/T 7714 |
Yu, Lu,Shi, Xiao-Lei,Mao, Yuanqing,et al. Simultaneously Boosting Thermoelectric and Mechanical Properties of n-Type Mg3Sb1.5Bi0.5-Based Zintls through Energy-Band and Defect Engineering[J]. ACS NANO,2024,18(2).
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APA |
Yu, Lu.,Shi, Xiao-Lei.,Mao, Yuanqing.,Liu, Wei-Di.,Ji, Zhen.,...&Chen, Zhi-Gang.(2024).Simultaneously Boosting Thermoelectric and Mechanical Properties of n-Type Mg3Sb1.5Bi0.5-Based Zintls through Energy-Band and Defect Engineering.ACS NANO,18(2).
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MLA |
Yu, Lu,et al."Simultaneously Boosting Thermoelectric and Mechanical Properties of n-Type Mg3Sb1.5Bi0.5-Based Zintls through Energy-Band and Defect Engineering".ACS NANO 18.2(2024).
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