南方科技大学知识苑(SUSTech KC): Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K

题名	Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K
作者	Su, Hao1 ; Cai, Yiyuan1 ; Lin, Yuhuan1 ; Xie, Yunfeng1 ; Mai, Yongfeng 2 ; Zhou, Shenghua2,3 ; Hu, Guangchong 3; He, Yu 2,3 ; Zhou, Feichi1 ; Liu, Xiaoguang1 ; Lin, Longyang1 ; Li, Yida1 ; Yu, Hongyu1 ; Chen, Kai1
通讯作者	Chen, Kai
发表日期	2024-05-01
DOI	10.1002/jnm.3258
发表期刊	INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS 影响因子和分区
ISSN	0894-3370
EISSN	1099-1204
卷号	37 期号:3
摘要	Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (V-th) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge-based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameters, including transconductance (g(m)), subthreshold swing (SS), linear region current (I-lin) and g(m)/I-DS related parameters are characterized and compared from 300 to 4 K. A Discussion on circuit performance and power consumption has been conducted to provide useful insights for low-temperature CMOS circuit design.
关键词	10 mK analytical bulk cryogenic g(m)/I-DS model MOSFETs threshold voltage transconductance
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
WOS研究方向	Engineering ; Mathematics
WOS类目	Engineering, Electrical & Electronic ; Mathematics, Interdisciplinary Applications
WOS记录号	WOS:001240489600001
出版者	WILEY
来源库	Web of Science
引用统计
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/790000
专题	工学院_深港微电子学院南方科技大学
作者单位	1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Shenzhen, Peoples R China 3.Int Quantum Acad, Shenzhen, Peoples R China
第一作者单位	深港微电子学院
通讯作者单位	深港微电子学院
第一作者的第一单位	深港微电子学院
推荐引用方式 GB/T 7714	Su, Hao,Cai, Yiyuan,Lin, Yuhuan,et al. Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K[J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS,2024,37(3).
APA	Su, Hao.,Cai, Yiyuan.,Lin, Yuhuan.,Xie, Yunfeng.,Mai, Yongfeng.,...&Chen, Kai.(2024).Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K.INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS,37(3).
MLA	Su, Hao,et al."Investigation of long channel bulk MOSFETs threshold voltage model down to 10 mK and key analog parameters at 4 K".INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS 37.3(2024).