Controlled epitaxial growth of strain-induced large-area bilayer MoS2 by chemical vapor deposition based on two-stage strategy

Wang, Kaiyi1,2; Xu, Ruoyan1,2; Gao, Fenglin; Xu, Shiyao1,2,3; Hao, Shijie1,2; Fan, Chen; Zhang, Yuan1,2,3; Wei, Yuehua1,2; Xue, Xiongxiong1,2; Hao, Guolin1,2,4

2024-08-01

10.1016/j.mtphys.2024.101501

MATERIALS TODAY PHYSICS   影响因子和分区

2542-5293

Two-dimensional (2D) bilayer transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their promising applications in the fields of electronics, optoelectronics, valleytronics and nonlinear optics. However, the precise synthesis of large-area, high-yield and uniform bilayer MoS2 semiconductors remains a significant challenge. Herein, we have developed one two-stage chemical vapor deposition strategy based on strain engineering, enabling the controlled preparation of large-area (4 x 6 cm2) bilayer MoS2 nanostructures. Systematic characterizations indicate that compressive strain was introduced during the growth of first layer MoS2, which effectively induces the synthesis of the second layer MoS2. First-principles calculations based on density functional theory further reveal the mechanism of strain induced controllable growth of bilayer MoS2. Field-effect transistors based on AA and AB stacking bilayer MoS2 have been fabricated exhibiting excellent electronic properties. Our work provides a new pathway for the precise preparation of bilayer TMDCs nanostructures, offering experimental support for their application in the field of electronic and optoelectronic devices.

Controllable growth Strain engineering Bilayer MoS 2 Two -stage strategy Chemical vapor deposition

SCI ; EI

英语

通讯

Scientific Research Fund of Hunan Provincial Education Department[52103289] ; Guangdong Basic and Applied Basic Research Foundation[22C0070] ; null[2022A1515012434]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied

WOS:001272978500001

ELSEVIER

20242916711537

Chemical vapor deposition ; Density functional theory ; Electronic properties ; Field effect transistors ; Layered semiconductors ; Nanostructures ; Nonlinear optics ; Optoelectronic devices ; Sulfur compounds ; Transition metals

Metallurgy and Metallography:531 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nonlinear Optics:741.1.1 ; Optical Devices and Systems:741.3 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Probability Theory:922.1 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4 ; Solid State Physics:933

Web of Science

1.Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Peoples R China
2.Xiangtan Univ, Hunan Inst Adv Sensing & Informat Technol, Xiangtan 411105, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
4.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

Wang, Kaiyi,Xu, Ruoyan,Gao, Fenglin,et al. Controlled epitaxial growth of strain-induced large-area bilayer MoS2 by chemical vapor deposition based on two-stage strategy[J]. MATERIALS TODAY PHYSICS,2024,46.

Wang, Kaiyi.,Xu, Ruoyan.,Gao, Fenglin.,Xu, Shiyao.,Hao, Shijie.,...&Hao, Guolin.(2024).Controlled epitaxial growth of strain-induced large-area bilayer MoS2 by chemical vapor deposition based on two-stage strategy.MATERIALS TODAY PHYSICS,46.

Wang, Kaiyi,et al."Controlled epitaxial growth of strain-induced large-area bilayer MoS2 by chemical vapor deposition based on two-stage strategy".MATERIALS TODAY PHYSICS 46(2024).