Numerical investigations into the impact of substrate defects on a grooved GaN-based ultraviolet phototransistor with an AlGaN polarization gate

Li, Yan1,2; Chu, Chunshuang3; Xuan, Zhan1,2; Zhu, Zhengji1,2; Tian, Kangkai3; Zhang, Yonghui1,2; Zhang, Zi-Hui1,2,3; Sun, Xiaowei4,5

2024-07-01

10.1364/AO.529313

APPLIED OPTICS   影响因子和分区

1559-128X

2155-3165

In this work, we propose defect-related models for a grooved GaN / Al x Ga 1 - x N / GaN UV phototransistor with an AlGaN polarization gate. The AlGaN polarization gate is set under the absorptive layer. With the developed models, we find that without the AlGaN polarization gate, the donor-type traps increase the dark current. In contrast, the electron trapping effect by acceptor-type traps reduces the dark current. Moreover, the AlGaN polarization gate helps deplete the electrons under the grooved region, which makes the dark current further suppressed. We also investigate the influence of the Al composition and the polarization level for the AlGaN polarization gate on the carrier transport, the dark current, and the photocurrent. Meanwhile, we report that the grooved depth plays an important role in reducing the background channel electron concentration, and the channel under the grooved region can be effectively closed by the AlGaN polarization gate when the grooved depth is properly set. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

SCI ; EI

英语

其他

National Natural Science Foundation of China["61975051","62074050,62275073"]

Optics

Optics

WOS:001283154400008

Optica Publishing Group

PHYSICS

Web of Science

1.State Key Lab Reliabil & Intelligence Elect Equipm, 5340 Xiping Rd, Tianjin 300401, Peoples R China
2.Hebei Univ Technol, Sch Elect & Informat Engn, Key Lab Elect Mat & Devices Tianjin, 5340 Xiping Rd, Tianjin 300401, Peoples R China
3.Guangdong Univ Technol, Sch Integrated Circuits, Guangzhou 510006, Peoples R China
4.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
5.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Li, Yan,Chu, Chunshuang,Xuan, Zhan,et al. Numerical investigations into the impact of substrate defects on a grooved GaN-based ultraviolet phototransistor with an AlGaN polarization gate[J]. APPLIED OPTICS,2024,63(19).

Li, Yan.,Chu, Chunshuang.,Xuan, Zhan.,Zhu, Zhengji.,Tian, Kangkai.,...&Sun, Xiaowei.(2024).Numerical investigations into the impact of substrate defects on a grooved GaN-based ultraviolet phototransistor with an AlGaN polarization gate.APPLIED OPTICS,63(19).

Li, Yan,et al."Numerical investigations into the impact of substrate defects on a grooved GaN-based ultraviolet phototransistor with an AlGaN polarization gate".APPLIED OPTICS 63.19(2024).