Synthesis of nitrogen-doped crystalline Ga2O3 2 O 3 thin films via trimethylgallium doped NH3/H2/N2/O2 3 /H 2 /N 2 /O 2 premixed stagnation flames

Li, Lun'ang1; Luo, Shengfeng1; Chang, Mengzhao1; Yin, Guanjie1; Sun, Mingchen1; Ma, Jingrui2; Sun, Xiao Wei2; Rahinov, Igor3; Zhou, Bo1,2

2024-11-01

10.1016/j.fuel.2024.132599

FUEL   影响因子和分区

0016-2361

1873-7153

This study presents a novel and cost-effective technique for fabricating nitrogen-doped crystalline alpha-Ga2O3 2 O 3 and (3-Ga2O3 2 O 3 thin films under atmospheric pressure conditions through flame synthesis for the first time. We employ metal-organic ammonia (NH3)-assisted 3 )-assisted flame synthesis (MO-NAFS) in a quasi-one-dimensional trimethylgallium (TMG) doped NH3/H2/N2/O2 3 /H 2 /N 2 /O 2 flat flame to achieve a one-step deposition of Ga2O3 2 O 3 onto c-plane alpha-Al2O3 2 O 3 substrates. We found that hydrogen (H2) 2 ) addition directly impacts the crystallinity of the Ga2O3 2 O 3 thin film. When only NH3 3 is employed as the fuel, a thin-film single-crystal nitrogen-doped (3-Ga2O3 2 O 3 was observed. Blending the NH3 3 with 5 % of H2 2 yields a single-crystal nitrogen-doped alpha-Ga2O3, 2 O 3 , while a further increase of H2 2 fraction up to 10 % results in a mixture of both alpha-Ga2O3 2 O 3 and (3-Ga2O3 2 O 3 crystals. Remarkably, the nitrogen doping through MO-NAFS was found to persistently result in an N/O atomic ratio as high as 1.12, as determined by the XPS analysis. This approach paves the way to a simple and scalable means for producing crystalline nitrogen-doped Ga2O3 2 O 3 thin films with potential control of crystal phase composition through parameter adjustments.

Flame synthesis NH3-assisted Nitrogen doping

SCI ; EI

英语

第一 ; 通讯

Program of NSFC[52206150] ; Guangdong Basic and Applied Basic Research Foundation[2024A1515010889] ; Israel Science Foundation (ISF)[2187/19]

Energy & Fuels ; Engineering

Energy & Fuels ; Engineering, Chemical

WOS:001281513800001

ELSEVIER SCI LTD

ENGINEERING

Web of Science

1.Southern Univ Sci & Technol, Dept Aerosp Engn & Mech, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
3.Open Univ Israel, Dept Nat Sci, IL-4353701 Raanana, Israel

Li, Lun'ang,Luo, Shengfeng,Chang, Mengzhao,et al. Synthesis of nitrogen-doped crystalline Ga2O3 2 O 3 thin films via trimethylgallium doped NH3/H2/N2/O2 3 /H 2 /N 2 /O 2 premixed stagnation flames[J]. FUEL,2024,375.

Li, Lun'ang.,Luo, Shengfeng.,Chang, Mengzhao.,Yin, Guanjie.,Sun, Mingchen.,...&Zhou, Bo.(2024).Synthesis of nitrogen-doped crystalline Ga2O3 2 O 3 thin films via trimethylgallium doped NH3/H2/N2/O2 3 /H 2 /N 2 /O 2 premixed stagnation flames.FUEL,375.

Li, Lun'ang,et al."Synthesis of nitrogen-doped crystalline Ga2O3 2 O 3 thin films via trimethylgallium doped NH3/H2/N2/O2 3 /H 2 /N 2 /O 2 premixed stagnation flames".FUEL 375(2024).