Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism

Yang，Qishuo1,2,3; Wang，Yun Peng4; Shi，Xiao Lei5; Li，Xing Xing1; Zhao，Erding1; Chen，Zhi Gang5; Zou，Jin6; Leng，Kai7; Cai，Yongqing8; Zhu，Liang1; Pantelides，Sokrates T.9,10; Lin，Junhao1,2

2024-12-01

10.1038/s41467-024-50525-4

Nature Communications   影响因子和分区

2041-1723

One-dimensional metallic transition-metal chalcogenide nanowires (TMC-NWs) hold promise for interconnecting devices built on two-dimensional (2D) transition-metal dichalcogenides, but only isotropic growth has so far been demonstrated. Here we show the direct patterning of highly oriented MoTe NWs in 2D molybdenum ditelluride (MoTe) using graphite as confined encapsulation layers under external stimuli. The atomic structural transition is studied through in-situ electrical biasing the fabricated heterostructure in a scanning transmission electron microscope. Atomic resolution high-angle annular dark-field STEM images reveal that the conversion of MoTe NWs from MoTe occurs only along specific directions. Combined with first-principles calculations, we attribute the oriented growth to the local Joule-heating induced by electrical bias near the interface of the graphite-MoTe heterostructure and the confinement effect generated by graphite. Using the same strategy, we fabricate oriented NWs confined in graphite as lateral contact electrodes in the 2H-MoTe FET, achieving a low Schottky barrier of 11.5 meV, and low contact resistance of 43.7 Ω µm at the metal-NW interface. Our work introduces possible approaches to fabricate oriented NWs for interconnections in flexible 2D nanoelectronics through direct metal phase patterning.

SCI

英语

第一 ; 通讯

2-s2.0-85199040422

Scopus

1.Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,China
2.Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong),Shenzhen,China
3.School of Mechanical and Mining Engineering,The University of Queensland Brisbane,Australia
4.School of Physics and Electronics,Hunan Key Laboratory for Super-Micro Structure and Ultrafast Process,Central South University,Changsha,China
5.School of Chemistry and Physics,Queensland University of Technology Brisbane,Australia
6.Center for Microscopy and Microanalysis,The University of Queensland Brisbane,St Lucia,St Lucia,Australia
7.Department of Applied Physics,Hong Kong Polytechnic University,Hung Hom,Kowloon,Hong Kong
8.Institute of Applied Physics and Materials Engineering,University of Macau,Taipa,SAR,Macao
9.Department of Physics and Astronomy,Vanderbilt University,Nashville,United States
10.Department of Electrical and Computer Engineering,Vanderbilt University,Nashville,United States

Yang，Qishuo,Wang，Yun Peng,Shi，Xiao Lei,et al. Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism[J]. Nature Communications,2024,15(1).

Yang，Qishuo.,Wang，Yun Peng.,Shi，Xiao Lei.,Li，Xing Xing.,Zhao，Erding.,...&Lin，Junhao.(2024).Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism.Nature Communications,15(1).

Yang，Qishuo,et al."Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism".Nature Communications 15.1(2024).