南方科技大学知识苑(SUSTech KC): High Q Factor and High Power Density Ultraviolet Resonant-Cavity Light-Emitting Diodes

题名	High Q Factor and High Power Density Ultraviolet Resonant-Cavity Light-Emitting Diodes
作者	Wang, Yu-Kun 1; An, Bing 1; Zheng, Zhong-Ming 1; Ou, Wei 1; Yang, Tao 1; Gu, Peng 1; Mei, Yang 1; Ying, Lei-Ying 1; Yang, Jing 2; Zhao, De-Gang 2; Liang, Feng 2; Zhang, Bao-Ping3,4
通讯作者	Liang, Feng; Zhang, Bao-Ping
发表日期	2024
DOI	10.1109/LPT.2024.3425535
发表期刊	IEEE Photonics Technology Letters 影响因子和分区
ISSN	1041-1135
EISSN	1941-0174
卷号	36 期号:16页码:997-1000
摘要	In this work, we fabricated high-performance GaN-based ultraviolet resonant cavity light-emitting diodes (RCLEDs) with dual dielectric distributed Bragg reflectors (DBRs). The devices were configured a copper plate and AlN current confinement aperture, which improved thermal dissipation and increased the maximum output power density up to 84.03 W/cm2 at injected current density of ~36 kA/cm2. The emission wavelength of the devices is 376.7 nm and narrow cavity modes were observed with a linewidth of 0.24 nm, corresponding to a high quality factor (Q) of 1570. © 1989-2012 IEEE.
相关链接	[IEEE记录]
收录类别	SCI ; EI
语种	英语
学校署名	通讯
资助项目	Manuscript received May XX, 2024; revised XXX XX, 2024; accepted XXX XX, 2024. Date of publication XXX XX, 2024. This work was supported in part by the National Natural Science Foundation of China 62234011, U21A20493 and 62104204, in part by the President\u2019s Foundation of Xiamen University 20720220108, and in part by the Natural Science Foundation of the Fujian Province of China 2023J05020. (Corresponding authors: Feng Liang; Bao-Ping Zhang.).
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20242916702727
EI主题词	Aluminum nitride ; Cavity resonators ; Distributed Bragg reflectors ; Gallium nitride ; III-V semiconductors ; Indium compounds ; Light emitting diodes ; Q factor measurement ; Tin oxides
EI分类号	Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Organic Compounds:804.1 ; Inorganic Compounds:804.2 ; Electric Variables Measurements:942.2
ESI学科分类	PHYSICS
来源库	EV Compendex
引用统计
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/794588
专题	南方科技大学
作者单位	1.Xiamen University, Laboratory of Micro/Nano-Optoelectronics, Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering, Xiamen; 361005, China 2.Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Beijing; 100083, China 3.Xiamen University, Laboratory of Micro/Nano-Optoelectronics, Department of Microelectronics and Integrated Circuits, Xiamen; 361005, China 4.Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen; 518055, China
通讯作者单位	南方科技大学
推荐引用方式 GB/T 7714	Wang, Yu-Kun,An, Bing,Zheng, Zhong-Ming,et al. High Q Factor and High Power Density Ultraviolet Resonant-Cavity Light-Emitting Diodes[J]. IEEE Photonics Technology Letters,2024,36(16):997-1000.
APA	Wang, Yu-Kun.,An, Bing.,Zheng, Zhong-Ming.,Ou, Wei.,Yang, Tao.,...&Zhang, Bao-Ping.(2024).High Q Factor and High Power Density Ultraviolet Resonant-Cavity Light-Emitting Diodes.IEEE Photonics Technology Letters,36(16),997-1000.
MLA	Wang, Yu-Kun,et al."High Q Factor and High Power Density Ultraviolet Resonant-Cavity Light-Emitting Diodes".IEEE Photonics Technology Letters 36.16(2024):997-1000.