南方科技大学知识苑(SUSTech KC): An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance

题名	An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance
作者	Jiang, Shaolong1,2 ; Hou, Fuchen1,2 ; Zeng, Shengfeng 3; Zhang, Yubo 4; Zhao, Erding 1 ; Sun, Yilin 5; Zhao, Liyun 6; Zhang, Cheng 7 ; Jia, Mengyuan 1 ; Dai, Jun-Feng7 ; Huang, Mingyuan1 ; Zhang, Qing 6; Zou, Xiaolong 3; Zhang, Yanfeng 6; Lin, Junhao1,2
通讯作者	Sun, Yilin
发表日期	2024
DOI	10.1016/j.scib.2024.07.025
发表期刊	Science Bulletin 影响因子和分区
ISSN	2095-9273
EISSN	2095-9281
摘要	Two-dimensional noble transition metal chalcogenide (NTMC) semiconductors represent compelling building blocks for fabricating flexible electronic and optoelectronic devices. While binary and ternary compounds have been reported, the existence of quaternary NTMCs with a greater elemental degree of freedom remains largely unexplored. This study presents the pioneering experimental realization of a novel semiconducting quaternary NTMC material, AuPdNaS2, synthesized directly on Au foils through chemical vapor deposition. The ribbon-shaped morphology of the AuPdNaS2 crystal can be finely tuned to a thickness as low as 9.2 nm. Scanning transmission electron microscopy reveals the atomic arrangement, showcasing robust anisotropic features; thus, AuPdNaS2 exhibits distinct anisotropic phonon vibrations and electrical properties. The field-effect transistor constructed from AuPdNaS2 crystal demonstrates a pronounced anisotropic conductance (σmax/σmin = 3.20) under gate voltage control. This investigation significantly expands the repertoire of NTMC materials and underscores the potential applications of AuPdNaS2 in nano-electronic devices. © 2024 Science China Press
收录类别	EI
语种	英语
学校署名	第一
资助项目	The work was supported by the National Natural Science Foundation of China (11974156, 12304223, 12304019, and 62104017), Guangdong Innovative and Entrepreneurial Research Team Program (2019ZT08C044), Shenzhen Science and Technology Program (KQTD20190929173815000 and 20200925161102001), the Science, Technology and Innovation Commission of Shenzhen Municipality (ZDSYS20190902092905285), and Guangdong Natural Science Foundation (2021A1515010049). STEM characterization was performed at the cryo-EM Center and Pico Center from SUSTech Core Research Facilities that receives support from the Presidential Fund and Development and Reform Commission of Shenzhen Municipality. Part of this work was performed at the Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong). Shaolong Jiang, Yanfeng Zhang, and Junhao Lin proposed and supervised the project. Shaolong Jiang performed the synthesis and transfer experiments, and did the SEM, OM, Raman, and AFM measurements with the assistance of Erding Zhao. Fuchen Hou prepared the STEM sample and conducted the STEM measurement. Cheng Zhang and Jun-Feng Dai conducted the SHG measurement. Mengyuan Jia and Mingyuan Huang conducted the micro-optical absorption spectrum measurement. Yilin Sun fabricated the FET device and carried out the electrical property measurement. Liyun Zhao and Qing Zhang did the ARPRS measurement. Shengfeng Zeng, Yubo Zhang, and Xiaolong Zou performed the theoretical calculations. Shaolong Jiang, Fuchen Hou, Shengfeng Zeng, Yubo Zhang, Yilin Sun, Xiaolong Zou, and Junhao Lin wrote the manuscript. All the authors contributed to the analyses and discussions of the results.
出版者	Elsevier B.V.
EI入藏号	20243116796788
EI主题词	Anisotropy ; Crystals ; Degrees of freedom (mechanics) ; Field effect transistors ; High resolution transmission electron microscopy ; Optoelectronic devices ; Palladium compounds ; Scanning electron microscopy ; Transition metals
EI分类号	Metallurgy and Metallography:531 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Chemical Reactions:802.2 ; Mechanics:931.1 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Crystalline Solids:933.1
来源库	EV Compendex
引用统计	被引频次[WOS]：1
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/794628
专题	理学院_物理系南方科技大学量子科学与工程研究院
作者单位	1.Department of Physics, Southern University of Science and Technology, Shenzhen; 518055, China 2.Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen; 518045, China 3.Shenzhen Geim Graphene Center, Institue of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen; 518055, China 4.Minjiang Collaborative Center for Theoretical Physics, College of Physics and Electronic Information Engineering, Minjiang University, Fuzhou; 350108, China 5.School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing; 100081, China 6.School of Materials Science and Engineering, Peking University, Beijing; 100871, China 7.Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, China
第一作者单位	物理系
第一作者的第一单位	物理系
推荐引用方式 GB/T 7714	Jiang, Shaolong,Hou, Fuchen,Zeng, Shengfeng,et al. An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance[J]. Science Bulletin,2024.
APA	Jiang, Shaolong.,Hou, Fuchen.,Zeng, Shengfeng.,Zhang, Yubo.,Zhao, Erding.,...&Lin, Junhao.(2024).An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance.Science Bulletin.
MLA	Jiang, Shaolong,et al."An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance".Science Bulletin (2024).