题名 | Orbital doublet driven even-spin Chern insulators |
作者 | |
通讯作者 | Liu, Lu |
发表日期 | 2024-07-31
|
DOI | |
发表期刊 | |
ISSN | 2469-9950
|
EISSN | 2469-9969
|
卷号 | 110期号:3 |
摘要 | Quantum spin Hall insulators hosting edge spin currents hold great potential for low-power spintronic devices. In this paper, we present a universal approach to achieve a high and near-quantized spin Hall conductance plateau within a sizable bulk gap. Using a nonmagnetic four-band model Hamiltonian, we demonstrate that an even-spin Chern (ESC) insulator can be accessed by tuning the sign of spin-orbit coupling (SOC) within a crystal symmetry-enforced orbital doublet. With the assistance of a high-spin Chern number of CS = -2 and spin U (1) quasisymmetry, this orbital doublet driven ESC phase is endowed with the near double quantized spin Hall conductance. We identify 12 crystallographic point groups supporting such a sign-tunable SOC. Furthermore, we apply our theory to realistic examples, and show the phase transition from a trivial insulator governed by positive SOC in the RuI3 monolayer to an ESC insulator dominated by negative SOC in the RuBr3 monolayer. This orbital doublet driven ESC insulator, RuBr3, showcases nontrivial characteristics including helical edge states, near double quantized spin Hall conductance, and robust corner states. Our work provides different pathways in the pursuit of the long-sought quantum spin Hall insulators. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | National Key R&D Program of China[2020YFA0308900]
; National Natural Science Foundation of China["12274194","12174062","12241402"]
; Guangdong Provincial Key Laboratory for Computational Science and Material Design[2019B030301001]
; Shenzhen Science and Technology Program[RCJC20221008092722009]
; Sci-ence, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20190902092905285]
|
WOS研究方向 | Materials Science
; Physics
|
WOS类目 | Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:001284717000002
|
出版者 | |
ESI学科分类 | PHYSICS
|
来源库 | Web of Science
|
引用统计 | |
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/803292 |
专题 | 理学院_物理系 南方科技大学 量子科学与工程研究院 |
作者单位 | 1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn SIQSE, Shenzhen, Peoples R China 3.Sudan Univ, Dept Phys, Lab Computat Phys Sci MOE, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 4.Shanghai Qi Zhi Inst, Shanghai 200232, Peoples R China 5.Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 6.Southern Univ Sci & Technol, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Peoples R China |
第一作者单位 | 物理系; 量子科学与工程研究院 |
通讯作者单位 | 物理系; 量子科学与工程研究院 |
第一作者的第一单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Liu, Lu,Liu, Yuntian,Li, Jiayu,et al. Orbital doublet driven even-spin Chern insulators[J]. PHYSICAL REVIEW B,2024,110(3).
|
APA |
Liu, Lu,Liu, Yuntian,Li, Jiayu,Wu, Hua,&Liu, Qihang.(2024).Orbital doublet driven even-spin Chern insulators.PHYSICAL REVIEW B,110(3).
|
MLA |
Liu, Lu,et al."Orbital doublet driven even-spin Chern insulators".PHYSICAL REVIEW B 110.3(2024).
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论