High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al_1-xSc_xN Thin Films

Zeng, Yang1; Lei, Yihan2,3; Wang, Yanghe2,3; Cheng, Mingqiang2,3; Liao, Luocheng2,3; Wang, Xuyang2,3; Ge, Jinxin2,3; Liu, Zhenghao2,3; Ming, Wenjie2,3; Li, Chao2,3; Xie, Shuhong1,4; Li, Jiangyu2,3; Li, Changjian2,3

2024-08-01

10.1002/smtd.202400722

SMALL METHODS   影响因子和分区

2366-9608

Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al1-xScxN) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al1-xScxN films with high leakage current. Here, the pulsed laser deposition of single crystalline epitaxial Al1-xScxN thin films on sapphire and 4H-SiC substrates is reported. Pure wurtzite phase is maintained up to x = 0.3 with <= 0.1 at% oxygen contamination. Polarization is estimated to be 140 mu C cm(-2) via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be five times of the undoped one when x = 0.3, making it desirable for high-frequency radiofrequency (RF) filters and 3D nonvolatile memories.

epitaxial thin films ferroelectricity piezoelectricity pulsed laser deposition Sc doped AlN

SCI ; EI

英语

通讯

National Natural Science Foundation of China[52172115] ; Nature Science Foundation of Guangdong Province, China[2022A1515010762] ; Shenzhen Science and Technology Program[20231121093057002] ; Guangdong Provincial Key Laboratory Program[2021B1212040001]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:001287412600001

WILEY-V C H VERLAG GMBH

Web of Science

1.Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Hunan, Peoples R China
2.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
3.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China
4.Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Thin Film Mat & Devices, Xiangtan 411105, Hunan, Peoples R China

Zeng, Yang,Lei, Yihan,Wang, Yanghe,et al. High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al_1-xSc_xN Thin Films[J]. SMALL METHODS,2024.

Zeng, Yang.,Lei, Yihan.,Wang, Yanghe.,Cheng, Mingqiang.,Liao, Luocheng.,...&Li, Changjian.(2024).High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al_1-xSc_xN Thin Films.SMALL METHODS.

Zeng, Yang,et al."High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al_1-xSc_xN Thin Films".SMALL METHODS (2024).