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题名

Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer

作者
通讯作者Zhang, Yonghui
发表日期
2024-08-01
DOI
发表期刊
ISSN
0146-9592
EISSN
1539-4794
卷号49页码:4405-4408
摘要
In this Letter, an omni-directional reflector (ODR) with a thin hybrid dielectric layer (hybrid-ODR) is proposed to enhance the light extraction efficiency (LEE) for inclined-sidewall-shaped AlGaN-based deep ultraviolet light-emitting diode (DUV LED) by inserting a thin diamond with high refraction index into a conventional Al/Al2O3based ODR. The three-dimensional finite-difference time-domain (3D FDTD) simulation results show that the LEE of TM-polarized light for the DUV LED with hybrid-ODR is enhanced by 18.5% compared with Al/Al2O3-based ODR. It is because the diamond can transform the evanescent wave in Al2O3 into the propagating light wave in diamond, thereby preventing effective excitation of the surface plasmon polariton (SPP) on the surface of the metal Al. Moreover, the Brewster’s angle effect causes the TM-polarized light in diamond to propagate effectively into AlGaN. Furthermore, decreasing the total thickness of the dielectric layer also improves the scattering effect of the inclined sidewall. However, the utilization of hybrid-ODR results in a slight reduction in the LEE for transverse electric (TE) polarized light because the light is confined to the diamond layer and eventually absorbed by the metal Al.
© 2024 Optica Publishing Group.
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
Funding. National Key Research and Development Program of China (2022YFB3605100); National Natural Science Foundation of China (61975051, 62074050, 62275073); Basic and Applied Basic Research Foundation of Guangdong Province (2021B151520022).
出版者
EI入藏号
20243216831112
EI主题词
Alumina ; Aluminum gallium nitride ; Aluminum oxide ; Diamonds ; Efficiency ; Extraction ; Finite difference time domain method ; III-V semiconductors ; Light polarization ; Reflection ; Surface plasmon resonance
EI分类号
Gems:482.2.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Chemical Operations:802.3 ; Inorganic Compounds:804.2 ; Production Engineering:913.1 ; Mathematics:921
ESI学科分类
PHYSICS
来源库
EV Compendex
引用统计
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/807068
专题工学院_电子与电气工程系
南方科技大学
作者单位
1.State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin; 300401, China
2.School of Integrated Circuits, Guangdong University of Technology, 100 Waihuan West Road, Fanyu District, Guangdong Province, Guangzhou City; 510006, China
3.Institute of Nanoscience and Applications, Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen; 518055, China
推荐引用方式
GB/T 7714
Liu, Zhaoqiang,Dong, Yifei,Wang, Linhao,et al. Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer[J]. Optics Letters,2024,49:4405-4408.
APA
Liu, Zhaoqiang.,Dong, Yifei.,Wang, Linhao.,Jia, Tong.,Chu, Chunshuang.,...&Sun, Xiaowei.(2024).Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer.Optics Letters,49,4405-4408.
MLA
Liu, Zhaoqiang,et al."Enhanced light extraction efficiency for the inclined-sidewall-shaped AlGaN-based DUV LED by using an omni-directional reflector with a thin hybrid dielectric layer".Optics Letters 49(2024):4405-4408.
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