题名 | Mechanically induced stacking faults and their impact on electrical transport properties in SnSe |
作者 | |
通讯作者 | Zhang, Bin; Zhou, Zizhen; Zhou, Xiaoyuan |
发表日期 | 2024-07-29
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DOI | |
发表期刊 | |
ISSN | 0003-6951
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卷号 | 125 |
摘要 | In van der Waals (vdW) layered thermoelectric materials, stacking faults play a pivotal role in determining their physical and transport properties. However, the absence of effective methods to control these stacking faults has hindered the optimization of transport performance. Here, in situ mechanical transmission electron microscopy techniques are applied to a state-of-the-art vdW thermoelectric compound, SnSe, to manipulate the generation of stacking faults. A comprehensive analysis of the atomic structure of stacking faults is conducted, and energy barrier calculations reveal the slip pathways of interlayer slips inducing these stacking faults. Furthermore, first-principles calculations demonstrate that introducing stacking faults can enhance thermoelectric performance by promoting band convergence and facilitating charge transport. These results provide a comprehensive understanding of stacking faults and present distinctive opportunities for structure manipulation to enhance functional properties in vdW layered materials. © 2024 Author(s). |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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资助项目 | This work is financially supported by the National Natural Science Foundation of China (Grant Nos. 52125103, 52071041, 12104071, and 11904039). Thanks to the support of the equipment of the Analysis and Test Center of Chongqing University in terms of material characterization.
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出版者 | |
EI入藏号 | 20243216803469
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EI主题词 | High resolution transmission electron microscopy
; Layered semiconductors
; Thermoelectricity
; Tin compounds
; Transport properties
; Van der Waals forces
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EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Semiconducting Materials:712.1
; Optical Devices and Systems:741.3
; Physical Chemistry:801.4
; Physical Properties of Gases, Liquids and Solids:931.2
; Atomic and Molecular Physics:931.3
; Crystal Lattice:933.1.1
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ESI学科分类 | PHYSICS
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来源库 | EV Compendex
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引用统计 |
被引频次[WOS]:1
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/807077 |
专题 | 工学院_材料科学与工程系 南方科技大学 |
作者单位 | 1.College of Physics, Center for Quantum Materials & Devices, Chongqing University, Chongqing; 401331, China 2.Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100024, China 3.Analytical and Testing Center, Chongqing University, Chongqing; 401331, China 4.College of Materials Science and Engineering, Chongqing University, Chongqing; 400044, China 5.Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, China |
推荐引用方式 GB/T 7714 |
Zheng, Sikang,Zhang, Bin,Zhou, Zizhen,et al. Mechanically induced stacking faults and their impact on electrical transport properties in SnSe[J]. Applied Physics Letters,2024,125.
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APA |
Zheng, Sikang.,Zhang, Bin.,Zhou, Zizhen.,Li, Ang.,Han, Guang.,...&Zhou, Xiaoyuan.(2024).Mechanically induced stacking faults and their impact on electrical transport properties in SnSe.Applied Physics Letters,125.
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MLA |
Zheng, Sikang,et al."Mechanically induced stacking faults and their impact on electrical transport properties in SnSe".Applied Physics Letters 125(2024).
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条目包含的文件 | 条目无相关文件。 |
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