中文版 | English
题名

Mechanically induced stacking faults and their impact on electrical transport properties in SnSe

作者
通讯作者Zhang, Bin; Zhou, Zizhen; Zhou, Xiaoyuan
发表日期
2024-07-29
DOI
发表期刊
ISSN
0003-6951
卷号125
摘要
In van der Waals (vdW) layered thermoelectric materials, stacking faults play a pivotal role in determining their physical and transport properties. However, the absence of effective methods to control these stacking faults has hindered the optimization of transport performance. Here, in situ mechanical transmission electron microscopy techniques are applied to a state-of-the-art vdW thermoelectric compound, SnSe, to manipulate the generation of stacking faults. A comprehensive analysis of the atomic structure of stacking faults is conducted, and energy barrier calculations reveal the slip pathways of interlayer slips inducing these stacking faults. Furthermore, first-principles calculations demonstrate that introducing stacking faults can enhance thermoelectric performance by promoting band convergence and facilitating charge transport. These results provide a comprehensive understanding of stacking faults and present distinctive opportunities for structure manipulation to enhance functional properties in vdW layered materials.
© 2024 Author(s).
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
This work is financially supported by the National Natural Science Foundation of China (Grant Nos. 52125103, 52071041, 12104071, and 11904039). Thanks to the support of the equipment of the Analysis and Test Center of Chongqing University in terms of material characterization.
出版者
EI入藏号
20243216803469
EI主题词
High resolution transmission electron microscopy ; Layered semiconductors ; Thermoelectricity ; Tin compounds ; Transport properties ; Van der Waals forces
EI分类号
Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Optical Devices and Systems:741.3 ; Physical Chemistry:801.4 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Atomic and Molecular Physics:931.3 ; Crystal Lattice:933.1.1
ESI学科分类
PHYSICS
来源库
EV Compendex
引用统计
被引频次[WOS]:1
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/807077
专题工学院_材料科学与工程系
南方科技大学
作者单位
1.College of Physics, Center for Quantum Materials & Devices, Chongqing University, Chongqing; 401331, China
2.Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100024, China
3.Analytical and Testing Center, Chongqing University, Chongqing; 401331, China
4.College of Materials Science and Engineering, Chongqing University, Chongqing; 400044, China
5.Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, China
推荐引用方式
GB/T 7714
Zheng, Sikang,Zhang, Bin,Zhou, Zizhen,et al. Mechanically induced stacking faults and their impact on electrical transport properties in SnSe[J]. Applied Physics Letters,2024,125.
APA
Zheng, Sikang.,Zhang, Bin.,Zhou, Zizhen.,Li, Ang.,Han, Guang.,...&Zhou, Xiaoyuan.(2024).Mechanically induced stacking faults and their impact on electrical transport properties in SnSe.Applied Physics Letters,125.
MLA
Zheng, Sikang,et al."Mechanically induced stacking faults and their impact on electrical transport properties in SnSe".Applied Physics Letters 125(2024).
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