GaN-Based Micro-LED Sidewall Defect Reduction via Plasma Pre-Treatment and Atomic Layer Deposition

Micro-LED has received wide attention from researchers and has been applied into micro-display technology due to its superior performance and development potential. However, The external quantum efficiency of Micro-LED decreases with the decrease of size, due to an increase in the proportion of sidewall defects at smaller size. Therefore, the sidewall treatment of Micro-LED is particularly important. In this study, the mechanism of the impact of H2 and NH3 plasma pre-treatment on sidewalls and the subsequent effect of Al2O3 deposition on the electrical performance of the device were explored. The results demonstrate that plasma pre-treatment with H2 and NH3, followed by Al2O3 deposition, effectively reduces surface defects, leakage current, and the ideality factor.