南方科技大学知识苑(SUSTech KC): Quantum Dot Light-Emitting Diodes with Sputtered TiO2 as Electron Transport Layer

题名	Quantum Dot Light-Emitting Diodes with Sputtered TiO2 as Electron Transport Layer
作者	Wei, Jiahao 1,2; Pan, Xinyi 1,2; Li, Depeng1,2 ; Xu, Zhonghua 1,3; Zhang, Zhuofan 1,2; Ma, Jingrui1,2 ; Wei Sun, Xiao 1,2
通讯作者	Ma, Jingrui; Wei Sun, Xiao
DOI	10.1002/sdtp.17365
发表日期	2024
会议名称	International Conference on Display Technology, 2024
ISSN	0097-966X
EISSN	2168-0159
会议录名称	Digest of Technical Papers - SID International Symposium
卷号	55
页码	1358-1361
会议日期	March 31, 2024 - April 3, 2024
会议地点	Hefei, China
出版者	John Wiley and Sons Inc
摘要	Quantum dot light-emitting diodes (QLEDs) is one of the most important components in the display field, and different structures have a certain impact on the final performance of the device. Previous QLEDs mainly use ZnO nanocrystals as the electron transport layer (ETL), but the chemical activity of ZnO nanocrystals under electric fields and moisture is not stable enough. To solve this problem, this paper studies the effects of TiO2 films with different thicknesses on the luminescence, current density and external quantum efficiency of QLED devices by using magnetron sputtered TiO2 as a new ETL. The experimental results show that the 50nm TiO2 film achieves the highest external quantum efficiency while maintaining favorable current density and brightness. © 2024 John Wiley and Sons Inc. All rights reserved.
学校署名	第一 ; 通讯
语种	英语
收录类别	EI
资助项目	This work was supported by the National Key Research and Development Program of China (No. 2022YFB3602903, 2021YFB3602703, and 2022YFB3606504), National Natural Science Foundation of China (No. 62122034), Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting (No. 2017KSYS007), Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting (No. ZDSYS201707281632549), Shenzhen Science and Technology Program (No. JCYJ20220818100411025), and Shenzhen Development and Reform Commission Project (Grant No. XMHT20220114005).
EI入藏号	20243216809971
EI主题词	Carbon Quantum Dots ; Display devices ; Electric fields ; Electron transport properties ; Graphene quantum dots ; II-VI semiconductors ; Nanocrystals ; Organic light emitting diodes (OLED) ; Quantum chemistry ; Quantum efficiency ; Titanium dioxide ; Zinc oxide
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Inorganic Compounds:804.2 ; Quantum Theory; Quantum Mechanics:931.4 ; Crystalline Solids:933.1
来源库	EV Compendex
引用统计
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/807145
专题	工学院_电子与电气工程系南方科技大学
作者单位	1.Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen; 518055, China 2.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen; 518055, China 3.College of Mathematics, Physics and Electronic Information Engineering, Guangxi Minzu Normal University, Chongzuo; 532200, China
第一作者单位	南方科技大学; 电子与电气工程系
通讯作者单位	南方科技大学; 电子与电气工程系
第一作者的第一单位	南方科技大学
推荐引用方式 GB/T 7714	Wei, Jiahao,Pan, Xinyi,Li, Depeng,et al. Quantum Dot Light-Emitting Diodes with Sputtered TiO2 as Electron Transport Layer[C]:John Wiley and Sons Inc,2024:1358-1361.