题名 | A highly efficient semi-finishing approach for polycrystalline diamond film via plasma-based anisotropic etching |
作者 | |
通讯作者 | Xu, Jianfeng |
发表日期 | 2024-11-01
|
DOI | |
发表期刊 | |
ISSN | 0924-0136
|
EISSN | 1873-4774
|
卷号 | 332 |
摘要 | Plasma anisotropic etching polishing (plasma-AEP), a non-contact polishing method, is proposed to achieve highly efficient planarization of polycrystalline diamond (PCD) films. Inductively coupled plasma, with a high concentration of reactive radicals, serves as the source of plasma-AEP. In-situ observation confirms that the planarization effect of plasma-AEP is realized through the preferential removal of the top areas of the pyramidshaped protrusions, despite the entire surface being uniformly irradiated by the plasma. The material removal rate in plasma-AEP for PCD achieves 127 mu m/min. Plasma-AEP is proven effective for PCD films with thicknesses of 0.5, 1, and 2 mm, demonstrating a generic semi-finishing approach for PCD regardless of thickness. Atomicscale nudged elastic band calculations revealed that the energy barriers for CO and CO2 desorption from 1- and 2coordinated C atoms are significantly lower than those for 3- and 4-coordinated ones. ReaxFF molecular dynamics simulations showed that at the top areas of the pyramid-shaped protrusions, 1- and 2-coordinated C atoms with a higher etching priority remained dominant during plasma-AEP, leading to the preferential removal of C atoms forming these protrusions. Furthermore, contact polishing was added to complete the finishing of the PCD film, followed by plasma-AEP, resulting in a nanoscale smooth surface with a roughness of 3.4 nm. Transmission electron microscopy confirmed that the crystal structures on the surface and subsurface of the PCD film were well ordered. Overall, this paper displays that plasma-AEP is a promising approach for highly efficient semi-finishing of PCD films. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 其他
|
资助项目 | National Natural Science Foundation of China["52405477","52225506"]
|
WOS研究方向 | Engineering
; Materials Science
|
WOS类目 | Engineering, Industrial
; Engineering, Manufacturing
; Materials Science, Multidisciplinary
|
WOS记录号 | WOS:001307842400001
|
出版者 | |
来源库 | Web of Science
|
引用统计 | |
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/828586 |
专题 | 工学院_机械与能源工程系 |
作者单位 | 1.Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, State Key Lab Intelligent Mfg Equipment & Technol, Luoyu Rd 1037, Wuhan 430074, Hubei, Peoples R China 2.Minist Educ, Key Lab Adv Mfg Technol High Performance Parts, Shanghai, Peoples R China 3.Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Guangdong, Peoples R China 4.Hubei Univ Technol, Sch Mech & Engn, Wuhan 430074, Hubei, Peoples R China 5.Osaka Univ, Res Ctr Precis Engn, Grad Sch Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan |
推荐引用方式 GB/T 7714 |
Liu, Nian,Lei, Ling,Jiang, Huilong,et al. A highly efficient semi-finishing approach for polycrystalline diamond film via plasma-based anisotropic etching[J]. JOURNAL OF MATERIALS PROCESSING TECHNOLOGY,2024,332.
|
APA |
Liu, Nian.,Lei, Ling.,Jiang, Huilong.,Zhang, Yongjie.,Xiao, Junfeng.,...&Yamamura, Kazuya.(2024).A highly efficient semi-finishing approach for polycrystalline diamond film via plasma-based anisotropic etching.JOURNAL OF MATERIALS PROCESSING TECHNOLOGY,332.
|
MLA |
Liu, Nian,et al."A highly efficient semi-finishing approach for polycrystalline diamond film via plasma-based anisotropic etching".JOURNAL OF MATERIALS PROCESSING TECHNOLOGY 332(2024).
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论