Signal Integrity Augmentation Techniques for the Design of 64-GBaud Coherent Transimpedance Amplifier in 90-nm SiGe BiCMOS

Shuaizhe Ma1; Nianquan Ran1; Xi Liu1; Yifei Xia1; Songqin Xu1; Wei Huang1; Chen Tan1; Jing Li1; Zhenyu Yin1; Shaoheng Lin2; Jianhua Pan2; Zhe Chen2; Chaoxuan Zhang3; Wu Wen3; Quan Pan4; Zhongming Xue1; Xiaoyan Gui1; Li Geng1; Dan Li1

2024

10.1109/TCSI.2024.3450700

IEEE Transactions on Circuits and Systems I: Regular Papers   影响因子和分区

1558-0806

This paper presents signal integrity augmentation design techniques in a 64-GBaud transimpedance amplifier (TIA) for coherent optical communication. In the FE-TIA, a bonding wire ringing reduction technique and an input DC current cancellation (IDCC) loop adapted for coherent communication are proposed. In the post amplifiers, a group delay variation (GDV) friendly bandwidth boosting technique is proposed to achieve optimal time domain performance. A non-linearity cancellation technique and a high-linearity gain control approach are proposed in both circuit and system levels. These signal integrity augmentation techniques form a toolkit to solve the design challenges in bandwidth, linearity, GDV, ringing, offset, crosstalk, etc. in high-speed high-order modulation communication. Fabricated in a 90-nm SiGe BiCMOS technology, the TIA shows input-referred noise current density of 15.1 pA/ $\surd $ Hz, bandwidth of over 40 GHz with GDV less than $\pm$ 3.75 ps. The TIA gain can be adjusted between 150 $\Omega $ -5 K $\Omega $ , which enables maximum overload input current of 3 mA $_{\mathrm{pp}}$ . The total harmonic distortion (THD) is less than 3% and the crosstalk between two channels is less than -3 dB. The chip consumes 264 mW from 3.3 V supply.

其他

1.Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China
2.UxfastIC, Xiamen, China
3.MXTronics, Beijing, China
4.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China

Shuaizhe Ma,Nianquan Ran,Xi Liu,et al. Signal Integrity Augmentation Techniques for the Design of 64-GBaud Coherent Transimpedance Amplifier in 90-nm SiGe BiCMOS[J]. IEEE Transactions on Circuits and Systems I: Regular Papers,2024,PP(99).

Shuaizhe Ma.,Nianquan Ran.,Xi Liu.,Yifei Xia.,Songqin Xu.,...&Dan Li.(2024).Signal Integrity Augmentation Techniques for the Design of 64-GBaud Coherent Transimpedance Amplifier in 90-nm SiGe BiCMOS.IEEE Transactions on Circuits and Systems I: Regular Papers,PP(99).

Shuaizhe Ma,et al."Signal Integrity Augmentation Techniques for the Design of 64-GBaud Coherent Transimpedance Amplifier in 90-nm SiGe BiCMOS".IEEE Transactions on Circuits and Systems I: Regular Papers PP.99(2024).