Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition

Fan，Shaosheng1,2; Ikeda，Masao2,3,4; Zhang，Baoping1,5; Li，Zenglin2; Su，Xujun2,3; Liu，Zongliang2; Xu，Ke2,3

2024-12-05

10.1016/j.jallcom.2024.176406

Journal of Alloys and Compounds   影响因子和分区

0925-8388

AlInN has emerged as a promising material for advanced optoelectronic and electronic devices due to its unique properties. However, achieving AlInN layers with excellent surface morphology remains challenging. Here, AlInN layers lattice-matched to GaN/sapphire were grown by atmospheric-pressure metalorganic chemical vapor deposition at 875 °C. The lowest surface roughness measured by atomic force microscopy was 0.37 nm after optimizing the growth temperature and flux of precursors. The roughness value was constant in the range of 15–72 nm film thickness. Introducing a TMI pre-flow period before AlInN growth, further reduced roughness to 0.28 nm, although a graded inclusion of Ga into the AlInN near the GaN/AlInN interface was observed. This improved surface morphology was interpreted by the In-surfactant effect enriched by the pre-flow in the early stage of AlInN. Additionally, the V-pits density was as low as 2×10 cm, primarily due to high growth pressure and also influenced by relatively high growth temperature. Analysis of Al incorporation using second-order reaction model suggests that the severe parasitic reactions between TMA and NH at atmospheric pressure can be effectively eliminated by a high total gas flow rate of 72 slm, ensuring in-plane uniformity in surface morphology and relatively good crystalline quality.

Al0.83In0.17N In-surfactant MOCVD Parasitic reaction Surface morphology V-pit

英语

其他

2-s2.0-85203465594

Scopus

1.Laboratory of Micro/Nano-Optoelectronics,School of Electronic Science and Engineering,Xiamen University,Xiamen,361005,China
2.Jiangsu Institute of Advanced Semiconductors,Suzhou,Suzhou,Jiangsu,215125,China
3.Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences (CAS),Suzhou,215123,China
4.Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences (CAS),Suzhou,215123,China
5.Institute of Nanoscience and Applications,Southern University of Science and Technology,Shenzhen,518055,China

Fan，Shaosheng,Ikeda，Masao,Zhang，Baoping,et al. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition[J]. Journal of Alloys and Compounds,2024,1007.

Fan，Shaosheng.,Ikeda，Masao.,Zhang，Baoping.,Li，Zenglin.,Su，Xujun.,...&Xu，Ke.(2024).Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition.Journal of Alloys and Compounds,1007.

Fan，Shaosheng,et al."Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition".Journal of Alloys and Compounds 1007(2024).