Development and application of capacitively coupled plasma jet device for optical fabrication

J. Zhang1; Z. Chen1; H. Deng1,2

10.1109/ICOPS58192.2024.10627411

2024-06-20

0730-9244

979-8-3503-6092-9

2024 IEEE International Conference on Plasma Science (ICOPS)

16-20 June 2024

Beijing, China

Due to the advantages of low cost, high efficiency and easy operation, atmospheric pressure plasma processing has drawn widespread attention of semiconductor and optical fabrication. Over the past few decades, various types of atmosphere plasma devices have been developed and adapted to applications in different fields. In this work, a capacitively coupled plasma (CCP) jet device with concentrated electric field driven by RF power with a frequency of 13.56 MHz was developed. The excitation mechanism was investigated and the design of electrodes were optimized both by simulation using COMSOL. Under the optimized processing parameters, a symmetric gaussian removal function can be obtained and the material removal rate (MRR) can be reached over $0.1 \mathrm{~mm} 3 / \mathrm{min}$ at a FWHM of 3 mm with $\mathrm{He}^{2} / \mathrm{CF}_{4} / \mathrm{O}_{2}$ mixture plasma gas. Combined with round-trip grating path, a fused silica workpiece with the size of $40 \mathrm{~mm} \times 40$ mm was processed for form error correction. The initial form error was RMS 185.34 nm, and it was reduced to 25.89 nm after correction by CCP jet, which verifies the ability of form error correction for optical components.

第一

1.Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, China
2.Southern University of Science and Technology, Institute for Applied Optics and Precision Engineering, Shenzhen, China

J. Zhang,Z. Chen,H. Deng. Development and application of capacitively coupled plasma jet device for optical fabrication[C],2024.