| 题名 | Nonlinear Hall effect on a disordered lattice |
| 作者 | |
| 通讯作者 | Lu, Hai-Zhou |
| 发表日期 | 2024-08-15
|
| DOI | |
| 发表期刊 | |
| ISSN | 2469-9950
|
| EISSN | 2469-9969
|
| 卷号 | 110期号:8 |
| 摘要 | The nonlinear Hall effect has recently attracted significant interest due to its potential as a promising spectral tool and for device applications. A theory of the nonlinear Hall effect on a disordered lattice is a crucial step towards explorations in realistic devices, but has not yet been addressed. We study the nonlinear Hall response on a lattice, which allows us to introduce strong disorder numerically. We reveal a disorder-induced Berry curvature that was not discovered in previous perturbation theories. The disorder-induced Berry curvature induces a fluctuation of the nonlinear Hall conductivity, which anomalously increases as the Fermi energy moves from the band edges to higher energies. More importantly, the fluctuation may explain those observations in recent experiments. We also find signatures of localization of the nonlinear Hall effect. This Letter shows a territory of the nonlinear Hall effect yet to be explored. © 2024 American Physical Society. |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| 资助项目 | This work was supported by the National Key R&D Program of China (2022YFA1403700), the Innovation Program for Quantum Science and Technology (2021ZD0302400), the National Natural Science Foundation of China (11925402, 12350402, and 12374041), Guangdong Basic and Applied Basic Research Foundation (Grant No. 2023B0303000011), Guangdong province (2020KCXTD001 and 2016ZT06D348), and the Science, Technology and Innovation Commission of Shenzhen Municipality (ZDSYS20170303165926217, JAY20170412152620376, and KYTDPT20181011104202253). R.C. is thankful for helpful discussions with B. Fu and acknowledges the support of the National Natural Science Foundation of China (12304195) and the Chutian Scholars Program in Hubei Province. H.P.S. was supported by the Wurzburg-Dresden Cluster of Excellence ct.qmat, EXC2147, Project-ID No. 390858490, the DFG (SFB 1170), and the Bavarian Ministry of Economic Affairs, Regional Development and Energy within the High-Tech Agenda Project Bausteine for das Quanten Computing auf Basis topologischer Materialen. The numerical calculations were supported by Center for Computational Science and Engineering of SUSTech.
|
| WOS研究方向 | Materials Science
; Physics
|
| WOS类目 | Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
| WOS记录号 | WOS:001296381900002
|
| 出版者 | |
| EI入藏号 | 20243516966436
|
| EI主题词 | Hall effect devices
|
| EI分类号 | :1201
; Electronic Equipment, General Purpose and Industrial:715
|
| ESI学科分类 | PHYSICS
|
| 来源库 | EV Compendex
|
| 引用统计 |
被引频次[WOS]：2
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/832762 |
| 专题 | 理学院_物理系 南方科技大学 量子科学与工程研究院 |
| 作者单位 | 1.Department of Physics, Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen; 518055, China 2.Department of Physics, Hubei University, Wuhan; 430062, China 3.Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen; 518055, China 4.International Quantum Academy, Shenzhen; 518048, China 5.Institute for Theoretical Physics and Astrophysics, University of Würzburg, Würzburg; 97074, Germany 6.Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen; 518045, China 7.International Center for Quantum Materials, School of Physics, Peking University, Beijing; 100871, China 8.Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University, Shanghai; 200433, China 9.Hefei National Laboratory, Hefei; 230088, China |
| 第一作者单位 | 物理系; 量子科学与工程研究院 |
| 通讯作者单位 | 物理系; 量子科学与工程研究院 |
| 第一作者的第一单位 | 物理系; 量子科学与工程研究院 |
| 推荐引用方式 GB/T 7714 |
Chen, Rui,Du, Z.Z.,Sun, Hai-Peng,et al. Nonlinear Hall effect on a disordered lattice[J]. Physical Review B,2024,110(8).
|
| APA |
Chen, Rui,Du, Z.Z.,Sun, Hai-Peng,Lu, Hai-Zhou,&Xie, X.C..(2024).Nonlinear Hall effect on a disordered lattice.Physical Review B,110(8).
|
| MLA |
Chen, Rui,et al."Nonlinear Hall effect on a disordered lattice".Physical Review B 110.8(2024).
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| 条目包含的文件 | 条目无相关文件。 | |||||
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