INVITED TALK for sub-area "Emissive, Micro‐LED, and Quantum‐Dot Display": On the strive towards all-InGaN sub-2µm sized RGB microLEDs

III-Nitride based LEDs based on InGaN active layers on GaN work very well for the blue and green emitting LEDs. However, the large lattice mis-match between redemitting active layers, with at least 35% indium in the active layers, and the GaN substrate still limits the efficiencies obtained to very low values. Unfortunately, the approach to use GaAs based (GaAs/AlInGaP) devices for the red fails for LEDs much smaller than 20μm, while AR-applications require pixel sizes down to, or even below, 2μm. After a review of the status of different approaches published towards all-nitride technologies, I will focus on our concept of realizing relaxed templates of InGaN on top of which we form sub-µm sized nanoLEDs.