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题名

Application of Nano Copper Paste in Large-Area Sintering: A Study on Enhancing Its Sintering Performance

作者
DOI
发表日期
2024-08-09
ISSN
2836-9734
ISBN
979-8-3503-5381-5
会议录名称
会议日期
7-9 Aug. 2024
会议地点
Tianjin, China
摘要
Silicon carbide power chips require interconnection materials with high thermal and electrical conductivity, stability at high temperatures, and resistance to electro migration. Nano-metal sintering technology, particularly using nano-silver and nano-copper, has emerged as a promising solution. This study investigates the large-area sintering (LAS) performance of different substrates and printing thicknesses. The results show that pure copper (Cu) substrates provide superior bonding compared to nickel (Ni)-plated ones, and the sintered layer thickness varies significantly with stencil thickness. The presence of a cross-shaped channel improves the volatilization of organic compounds, reducing porosity. These findings highlight the potential of nano-metal sintering materials in enhancing the reliability and performance of high-power chips.
学校署名
第一
相关链接[IEEE记录]
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成果类型会议论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/833868
专题工学院_深港微电子学院
作者单位
1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
2.Shennan Circuits Co.,LTD, Shenzhen, China
3.R&D Departnment, Sky Chip Interconnection Technology Co.,LTD, Shenzhen, China
4.School of Software, Shenyang University of Technology, Shenyang, China
5.R&D Departnment, Suzhou Boschman Semiconductor Equipment Co.,LTD, Suzhou, China
6.R&D Departnment, Boschman Technologies B. V., Amsterdam, Netherlands
7.R&D Center AKMMeadville Electronics (Xiamen) Co.,LTD, Xiamen, China
第一作者单位深港微电子学院
第一作者的第一单位深港微电子学院
推荐引用方式
GB/T 7714
Chenshan Gao,Shizhen Li,Qian Yao,et al. Application of Nano Copper Paste in Large-Area Sintering: A Study on Enhancing Its Sintering Performance[C],2024.
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