Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics

Zhu, Cheng-Yi1,2; Zhang, Meng-Ru3,4; Chen, Qing2; Yue, Lin-Qing2; Song, Rong5; Wang, Cong6; Li, Hui-Zhen2; Zhou, Feichi7; Li, Yang8; Zhao, Weiwei2; Zhen, Liang2,8; Si, Mengwei9; Li, Jia5; Wang, Jingli3; Chai, Yang6; Xu, Cheng-Yan2,8; Qin, Jing-Kai1,2

2024-09-01

10.1038/s41928-024-01245-6

NATURE ELECTRONICS   影响因子和分区

2520-1131

Integrated circuits based on two-dimensional semiconductors require ultrathin gate insulators that can provide high interface quality and dielectric reliability, minimized electrically active traps and efficient gate controllability. However, existing two-dimensional insulators do not provide a good trade-off in terms of bandgap, breakdown strength, dielectric constant, leakage current and bias temperature stability. Here, we show that single crystals of magnesium niobate (MgNb2O6) can be obtained through a buffer-controlled epitaxial growth process on a mica substrate. The atomically thin MgNb2O6 crystals have a wide bandgap (around 5.0 eV), high dielectric constant (around 20), large breakdown voltage (around 16 MV cm(-1)) and good thermal reliability. The MgNb2O6 can form a van der Waals interface with monolayer molybdenum disulfide (MoS2) with an extremely low density of trap states. MoS2 field-effect transistors with MgNb2O6 gate dielectrics exhibit a hysteresis under 0.9 mV (MV cm(-1))(-1), a subthreshold swing of 62 mV dec(-1), an on/off current ratio of up to 4 x 10(7) and high electrical reliability at 500 K. The excellent electrostatic controllability of MgNb2O6 allowed us to create graphene-contacted transistors and inverter circuits with a channel length of 50 nm.

SCI

英语

其他

Shenzhen Science and Technology Innovation Commission["2022YFA1203802","2021YFB3601202"] ; National Key R&D Program of China["52102161","62204056"] ; National Natural Science Foundation of China["RCYX20221008092912045","RCJC20210706091950025","JCYJ20220530115204009"] ; Shenzhen Science and Technology Program[22YF1402700]

Engineering

Engineering, Electrical & Electronic

WOS:001315604900003

NATURE PORTFOLIO

Web of Science

1.Harbin Inst Technol Shenzhen, Sch Integrated Circuits, Shenzhen, Peoples R China
2.Harbin Inst Technol Shenzhen, Sch Mat Sci & Engn, Sauvage Lab Smart Mat, Shenzhen, Peoples R China
3.Fudan Univ, Frontier Inst Chip & Syst, State Key Lab Integrated Chips & Syst, Shanghai, Peoples R China
4.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai, Peoples R China
5.Hunan Univ, Coll Chem & Chem Engn, Hunan Prov Key Lab Two Dimens Mat, Changsha, Peoples R China
6.Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China
7.Southern Univ Sci & Technol, Sch Microelect, Shenzhen, Peoples R China
8.Harbin Inst Technol, MOE Key Lab Microsyst & Microstruct Mfg, Harbin, Peoples R China
9.Shanghai Jiao Tong Univ, Dept Elect Engn, Shanghai, Peoples R China

Zhu, Cheng-Yi,Zhang, Meng-Ru,Chen, Qing,et al. Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics[J]. NATURE ELECTRONICS,2024.

Zhu, Cheng-Yi.,Zhang, Meng-Ru.,Chen, Qing.,Yue, Lin-Qing.,Song, Rong.,...&Qin, Jing-Kai.(2024).Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics.NATURE ELECTRONICS.

Zhu, Cheng-Yi,et al."Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics".NATURE ELECTRONICS (2024).