南方科技大学知识苑(SUSTech KC): Reversed charge transfer in a type I MoS<sub>2</sub>/PtSe<sub>2</sub> heterostructure probed by ultrafast two-dimensional electronic spectroscopy

题名	Reversed charge transfer in a type I MoS₂/PtSe₂ heterostructure probed by ultrafast two-dimensional electronic spectroscopy
作者	Xu, Niu1 ; Song, Weiming1 ; Liu, Kaizhen 1 ; Yang, Jin1 ; Zhong, Jin-Hui1,2,3
通讯作者	Yang, Jin; Zhong, Jin-Hui
发表日期	2024-09-01
DOI	10.1039/d4tc03378g
发表期刊	JOURNAL OF MATERIALS CHEMISTRY C 影响因子和分区
ISSN	2050-7526
EISSN	2050-7534
摘要	Charge transfer processes are crucial for determining the optoelectronic properties of heterostructures constructed from atomically thin transition metal dichalcogenides. Despite significant studies of the resulting inter-layer excitons in type II heterostructures, much less is known about the charge transfer mechanism and dynamics in type I heterostructures. Here, we reveal a two-step reversed charge transfer process in a type I MoS2/PtSe2 heterostructure using ultrafast two-dimensional electronic spectroscopy with a broadband pulse that simultaneously excites MoS2 and PtSe2. Unique cross-peaks located at low excitation energy and high detection energy indicate primary hot carrier transfer within 1 ps and secondary Auger-assisted carrier transfer occurring between 6 and 100 ps from the small bandgap PtSe2 to the large bandgap MoS2. This charge transfer creates an out-of-plane interfacial electric field across the heterostructure interface, which dynamically blue shifts the exciton energy of MoS(2)via the combined effect of the Stark effect and the reduction of exciton binding energy. Charge transfer from the large bandgap MoS2 to the small bandgap PtSe2 is found to be not significant, possibly due to the resonant optical excitation that creates strongly bound excitons in the MoS2 layer, making the forward charge transfer inefficient. The results demonstrate the opportunity for functional optoelectronic and photocatalytic materials with type I band alignment under sub-bandgap excitation conditions by making use of the characteristics of hot carriers generated by low energy photons.
相关链接	[来源记录]
收录类别	SCI
语种	英语
学校署名	第一 ; 通讯
资助项目	National Natural Science Foundation of China[22272072] ; National Natural Science Foundation of China[2023A1515012742] ; Guangdong Basic and Applied Basic Research Foundation[20220815101643002] ; Shenzhen Science and Technology Program[G03050K002]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001314957400001
出版者	ROYAL SOC CHEMISTRY
来源库	Web of Science
引用统计
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/834235
专题	工学院_材料科学与工程系南方科技大学
作者单位	1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Guangdong Prov Key Lab Sustainable Biomimet Mat &, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Inst Innovat Mat, Shenzhen 518055, Peoples R China
第一作者单位	材料科学与工程系
通讯作者单位	材料科学与工程系; 南方科技大学
第一作者的第一单位	材料科学与工程系
推荐引用方式 GB/T 7714	Xu, Niu,Song, Weiming,Liu, Kaizhen,et al. Reversed charge transfer in a type I MoS₂/PtSe₂ heterostructure probed by ultrafast two-dimensional electronic spectroscopy[J]. JOURNAL OF MATERIALS CHEMISTRY C,2024.
APA	Xu, Niu,Song, Weiming,Liu, Kaizhen,Yang, Jin,&Zhong, Jin-Hui.(2024).Reversed charge transfer in a type I MoS₂/PtSe₂ heterostructure probed by ultrafast two-dimensional electronic spectroscopy.JOURNAL OF MATERIALS CHEMISTRY C.
MLA	Xu, Niu,et al."Reversed charge transfer in a type I MoS₂/PtSe₂ heterostructure probed by ultrafast two-dimensional electronic spectroscopy".JOURNAL OF MATERIALS CHEMISTRY C (2024).