题名 | Different Optical Behaviors Revealed by Electroluminescence and Photoluminescence of InGaN/GaN Coupled Quantum Wells |
作者 | |
通讯作者 | Mei, Yang; Zhang, Baoping |
发表日期 | 2024-09-01
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DOI | |
发表期刊 | |
EISSN | 2079-4991
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卷号 | 14期号:18 |
摘要 | The optical properties of wurtzite violet InGaN/GaN coupled quantum well (QW) structures are experimentally studied using photoluminescence (PL) and electroluminescence (EL) spectroscopy. Two emission peaks, referred to as Peak H and Peak L, are observed in both PL and EL spectra, due to the ground state splitting induced by the well coupling. Experimental PL and EL results reveal that coupled QWs show different optical responses due to the different variation in the electric field inside the QW structure. Since the direction of the polarization electric field of the as-grown well/barrier layers is different, the external electric field applied by electrodes can change the energy band alignment between the well and the barrier layers, thus adjusting the coupling between the wells. Our results provide relevant information to improve our understanding of the optical properties of InGaN/GaN QWs and to develop novel optoelectronic devices. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 通讯
|
资助项目 | null[U21A20493]
; null[62234011]
; null[62104204]
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WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
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WOS类目 | Chemistry, Multidisciplinary
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
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WOS记录号 | WOS:001323408600001
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出版者 | |
来源库 | Web of Science
|
引用统计 | |
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/835402 |
专题 | 南方科技大学 |
作者单位 | 1.Xiamen Univ, Dept Microelect & Integrated Circuits, Lab Micro Nanooptoelectron, Xiamen 361005, Peoples R China 2.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China 3.Toptrans Suzhou Corp Ltd, Suzhou 215000, Peoples R China |
通讯作者单位 | 南方科技大学 |
推荐引用方式 GB/T 7714 |
Xu, Huan,Wang, Yachao,Hou, Xin,et al. Different Optical Behaviors Revealed by Electroluminescence and Photoluminescence of InGaN/GaN Coupled Quantum Wells[J]. NANOMATERIALS,2024,14(18).
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APA |
Xu, Huan.,Wang, Yachao.,Hou, Xin.,Ou, Wei.,Yang, Tao.,...&Zhang, Baoping.(2024).Different Optical Behaviors Revealed by Electroluminescence and Photoluminescence of InGaN/GaN Coupled Quantum Wells.NANOMATERIALS,14(18).
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MLA |
Xu, Huan,et al."Different Optical Behaviors Revealed by Electroluminescence and Photoluminescence of InGaN/GaN Coupled Quantum Wells".NANOMATERIALS 14.18(2024).
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条目包含的文件 | 条目无相关文件。 |
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