Reducing Dark Current Density of PbS Quantum Dot Short-Wave Infrared Photodetectors by Polymer Buffer Layer Modification

Zhulu Song1; Tao Cao2; Xiao Wang2; Yangzhi Tan1; Jiufeng Wu2; Zhaojin Wang1; Haibo Zhu2; Fan Fang2; Dan Wu3; Wei Chen2; Kai Wang1

2024

10.1109/LED.2024.3470131

IEEE Electron Device Letters   影响因子和分区

1558-0563

Lead sulfide (PbS) quantum dot (QD) photodetectors have received intensive attention due to their great potential in short-wave infrared photodetection. The hole transport layer commonly employed in the PbS QD photodetector consists of passivated PbS QDs with 1,2-ethanedithiol (PbS-EDT). However, EDT causes a severe chemical erosion to the PbS QDs active layer (PbS-AL), which will hinder carrier extraction and increases dark current density. Here, we introduce a PbS QD photodetector modified with a polymer material PTQ10[(thiophene)-alt(6,7-difluoro-2-(2-hexyldecyloxy) quinoxaline)] as a buffer layer at the interface between the PbS-EDT and PbS-AL. The PTQ10 can provide protection for PbS-AL against EDT and facilitating carrier extraction. At a working voltage of -0.5 V, the optimized device with PTQ10 exhibits a low dark current density of 360 nA/cm2, a high detectivity of 5.4×1011 Jones at 1080 nm, and a fast response time of 4.90/5.76 μs.

第一

1.Institute of Nanoscience and Applications, and Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, China
2.College of Engineering Physics, Shenzhen Technology University, Shenzhen, China
3.College of New Materials and New Energies, Shenzhen Technology University, Shenzhen, China

Zhulu Song,Tao Cao,Xiao Wang,et al. Reducing Dark Current Density of PbS Quantum Dot Short-Wave Infrared Photodetectors by Polymer Buffer Layer Modification[J]. IEEE Electron Device Letters,2024,PP(99).

Zhulu Song.,Tao Cao.,Xiao Wang.,Yangzhi Tan.,Jiufeng Wu.,...&Kai Wang.(2024).Reducing Dark Current Density of PbS Quantum Dot Short-Wave Infrared Photodetectors by Polymer Buffer Layer Modification.IEEE Electron Device Letters,PP(99).

Zhulu Song,et al."Reducing Dark Current Density of PbS Quantum Dot Short-Wave Infrared Photodetectors by Polymer Buffer Layer Modification".IEEE Electron Device Letters PP.99(2024).