题名 | Comparative study of photoluminescence dynamics of CdSe quantum dots on glass and ITO |
作者 | |
通讯作者 | Sun, Xiao Wei |
发表日期 | 2024-09-23
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DOI | |
发表期刊 | |
ISSN | 1094-4087
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卷号 | 32期号:20 |
摘要 | This study investigates the photoluminescence (PL) dynamics of CdSe quantum dots (QDs) on indium tin oxide (ITO) substrates under various excitation intensities to understand the impact of QD charging on PL. The analysis reveals that under low pump fluence, approximately 75% of the QDs in the assembly are negatively charged due to direct contact with the ITO substrate, resulting in a shortened average PL lifetime and weakened PL intensity. Under high pump fluence conditions, the charging percentage is further increased by the photo charging effect, leading to the undesirable depletion of the biexciton state through the accelerated non-radiative Auger process. The PL dynamic mechanism is analyzed to explain the absence of amplified spontaneous emission (ASE) in the QD on ITO samples. The findings of this study have potential implications for the development and optimization of QD-based devices, such as quantum dot light-emitting diodes (QLEDs) and quantum dot lasers, by providing insights into the detrimental effects of QD charging on device performance and suggesting strategies to mitigate these effects. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 第一
; 通讯
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资助项目 | Development and Reform Commission of Shenzhen Municipality[XMHT20220114005]
; Shenzhen Science and Technology Innovation Program[JCYJ20220818100411025]
; Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting[ZDSYS201707281632549]
; Program for University Key Laboratory of Guangdong Province for Advanced Quantum Dot Displays and Lighting[2017KSYS007]
; National Natural Science Foundation of China[62122034]
; National Key Research and Development Program of China["2021YFB3602703","2022YFB3602903","2022YFB3606504"]
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WOS研究方向 | Optics
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WOS类目 | Optics
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WOS记录号 | WOS:001326989300002
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出版者 | |
来源库 | Web of Science
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引用统计 | |
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/842820 |
专题 | 工学院_电子与电气工程系 南方科技大学 |
作者单位 | 1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen, Peoples R China 2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China 3.Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Peoples R China 4.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China 5.Southern Univ Sci & Technol, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Minist Educ, Key Lab Energy Convers & Storage Technol, Shenzhen, Peoples R China 6.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Dot Displays & Lighti, Shenzhen, Peoples R China |
第一作者单位 | 南方科技大学; 电子与电气工程系 |
通讯作者单位 | 南方科技大学; 电子与电气工程系 |
第一作者的第一单位 | 南方科技大学 |
推荐引用方式 GB/T 7714 |
Xiang, Guohong,Zhang, Xinhai,Wang, Kai,et al. Comparative study of photoluminescence dynamics of CdSe quantum dots on glass and ITO[J]. OPTICS EXPRESS,2024,32(20).
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APA |
Xiang, Guohong,Zhang, Xinhai,Wang, Kai,Kwok, Hoi Sing,&Sun, Xiao Wei.(2024).Comparative study of photoluminescence dynamics of CdSe quantum dots on glass and ITO.OPTICS EXPRESS,32(20).
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MLA |
Xiang, Guohong,et al."Comparative study of photoluminescence dynamics of CdSe quantum dots on glass and ITO".OPTICS EXPRESS 32.20(2024).
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