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题名

Comparative study of photoluminescence dynamics of CdSe quantum dots on glass and ITO

作者
通讯作者Sun, Xiao Wei
发表日期
2024-09-23
DOI
发表期刊
ISSN
1094-4087
卷号32期号:20
摘要
This study investigates the photoluminescence (PL) dynamics of CdSe quantum dots (QDs) on indium tin oxide (ITO) substrates under various excitation intensities to understand the impact of QD charging on PL. The analysis reveals that under low pump fluence, approximately 75% of the QDs in the assembly are negatively charged due to direct contact with the ITO substrate, resulting in a shortened average PL lifetime and weakened PL intensity. Under high pump fluence conditions, the charging percentage is further increased by the photo charging effect, leading to the undesirable depletion of the biexciton state through the accelerated non-radiative Auger process. The PL dynamic mechanism is analyzed to explain the absence of amplified spontaneous emission (ASE) in the QD on ITO samples. The findings of this study have potential implications for the development and optimization of QD-based devices, such as quantum dot light-emitting diodes (QLEDs) and quantum dot lasers, by providing insights into the detrimental effects of QD charging on device performance and suggesting strategies to mitigate these effects. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
相关链接[来源记录]
收录类别
语种
英语
学校署名
第一 ; 通讯
资助项目
Development and Reform Commission of Shenzhen Municipality[XMHT20220114005] ; Shenzhen Science and Technology Innovation Program[JCYJ20220818100411025] ; Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting[ZDSYS201707281632549] ; Program for University Key Laboratory of Guangdong Province for Advanced Quantum Dot Displays and Lighting[2017KSYS007] ; National Natural Science Foundation of China[62122034] ; National Key Research and Development Program of China["2021YFB3602703","2022YFB3602903","2022YFB3606504"]
WOS研究方向
Optics
WOS类目
Optics
WOS记录号
WOS:001326989300002
出版者
来源库
Web of Science
引用统计
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/842820
专题工学院_电子与电气工程系
南方科技大学
作者单位
1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China
3.Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Peoples R China
4.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China
5.Southern Univ Sci & Technol, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Minist Educ, Key Lab Energy Convers & Storage Technol, Shenzhen, Peoples R China
6.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Dot Displays & Lighti, Shenzhen, Peoples R China
第一作者单位南方科技大学;  电子与电气工程系
通讯作者单位南方科技大学;  电子与电气工程系
第一作者的第一单位南方科技大学
推荐引用方式
GB/T 7714
Xiang, Guohong,Zhang, Xinhai,Wang, Kai,et al. Comparative study of photoluminescence dynamics of CdSe quantum dots on glass and ITO[J]. OPTICS EXPRESS,2024,32(20).
APA
Xiang, Guohong,Zhang, Xinhai,Wang, Kai,Kwok, Hoi Sing,&Sun, Xiao Wei.(2024).Comparative study of photoluminescence dynamics of CdSe quantum dots on glass and ITO.OPTICS EXPRESS,32(20).
MLA
Xiang, Guohong,et al."Comparative study of photoluminescence dynamics of CdSe quantum dots on glass and ITO".OPTICS EXPRESS 32.20(2024).
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