Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

Wen, Kangyao1,2; He, Jiaqi2; Jiang, Yang2; Du, Fangzhou2; Deng, Chenkai2; Wang, Peiran2; Tang, Chuying2; Li, Wenmao2; Hu, Qiaoyu2; Sun, Yuhan1,2; Wang, Qing2; Jiang, Yulong1; Yu, Hongyu2,3,4

2024-09-30

10.1063/5.0230096

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

This paper reports a non-recessed normally off AlGaN/GaN high-electron-mobility transistor (HEMT) with a charge trapping gate dielectric stack. The charge trapping gate dielectric stack featuring a low density of fixed positive charges consists of an O-3-based Al2O3 tunneling layer and an O-3-based HfO2 blocking layer, both deposited via atomic layer deposition. For HEMT with a 15 nm AlGaN barrier layer, a threshold voltage of 2.57 V and an on-resistance of 8.50 Omega x mm are achieved. For positive bias temperature instability (PBTI) testing, the electric field provided by the 15 nm AlGaN layer serves as a barrier to channel carriers, significantly enhancing the PBTI test stability. The optimized gate dielectric stack enables the fabrication of the non-recessed normally off metal-insulator-semiconductor-HEMT with enhanced threshold voltage (V-th) stability.

SCI

英语

通讯

Physics

Physics, Applied

WOS:001326834200010

AIP Publishing

Web of Science

1.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Engn Res Ctr Integrated Circuits Next Generat Comm, Minist Educ, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Peoples R China

Wen, Kangyao,He, Jiaqi,Jiang, Yang,et al. Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability[J]. APPLIED PHYSICS LETTERS,2024,125(14).

Wen, Kangyao.,He, Jiaqi.,Jiang, Yang.,Du, Fangzhou.,Deng, Chenkai.,...&Yu, Hongyu.(2024).Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability.APPLIED PHYSICS LETTERS,125(14).

Wen, Kangyao,et al."Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability".APPLIED PHYSICS LETTERS 125.14(2024).