南方科技大学知识苑(SUSTech KC): Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN<sub>x</sub> Stress-Engineering Technique

题名	Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique
作者	Deng, Chenkai 1,2 ; Wang, Peiran2 ; Tang, Chuying 1,2; Hu, Qiaoyu 2 ; Du, Fangzhou 2 ; Jiang, Yang 3; Zhang, Yi 3; Li, Mujun 2 ; Xiong, Zilong 2 ; Wang, Xiaohui2 ; Wen, Kangyao 4; Li, Wenmao 1,2 ; Tao, Nick 5; Wang, Qing 2,6 ; Yu, Hongyu2,6
通讯作者	Wang, Qing; Yu, Hongyu
发表日期	2024-09-01
DOI	10.3390/nano14181471
发表期刊	NANOMATERIALS 影响因子和分区
EISSN	2079-4991
卷号	14 期号:18
摘要	In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiNx passivation contributed to the suppression of Fowler-Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiNx passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (f(t)) and maximum oscillation frequency (f(max)) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiNx passivation was markedly superior to that of the devices with stress-free SiN(x )passivation. These results confirm the substantial potential of the SiNx stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems.
关键词	GaN HEMTs RF gate leakage SiNx stress-engineered
相关链接	[来源记录]
收录类别	SCI
语种	英语
学校署名	通讯
资助项目	High Level of Special Funds[G03034K004] ; null[62274082] ; null[2023A1515030034] ; null[HZQB-KCZYZ-2021052] ; null[JCYJ20220818100605012] ; null[JSGG20220831094404008] ; null[JCYJ20220530115411025] ; null[K2023390010]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:001326085700001
出版者	MDPI
来源库	Web of Science
引用统计	被引频次[WOS]：1
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/842841
专题	工学院_深港微电子学院南方科技大学
作者单位	1.Harbin Inst Technol, Sch Energy Sci & Engn, Harbin 150001, Peoples R China 2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China 3.Univ Hong Kong, Fac Engn, Hong Kong 999077, Peoples R China 4.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China 5.Maxscend Microelect Co Ltd, Wuxi 214072, Peoples R China 6.Southern Univ Sci & Technol, Minist Educ, Engn Res Ctr Integrated Circuits Next Generat Comm, Shenzhen 518055, Peoples R China
第一作者单位	深港微电子学院
通讯作者单位	深港微电子学院; 南方科技大学
推荐引用方式 GB/T 7714	Deng, Chenkai,Wang, Peiran,Tang, Chuying,et al. Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique[J]. NANOMATERIALS,2024,14(18).
APA	Deng, Chenkai.,Wang, Peiran.,Tang, Chuying.,Hu, Qiaoyu.,Du, Fangzhou.,...&Yu, Hongyu.(2024).Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique.NANOMATERIALS,14(18).
MLA	Deng, Chenkai,et al."Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique".NANOMATERIALS 14.18(2024).