Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors

Wang，Zhuofan1; Lu，Hongliang1; Zhang，Yuming1; Liu，Chen1; Zhang，Haonan1; Yu，Yanhao2

2024

10.3390/mi15010041

Micromachines   影响因子和分区

2072-666X

Ultrathin flexible encapsulation (UFE) using multilayered films has prospects for practical applications, such as implantable and wearable electronics. However, existing investigations of the effect of mechanical bending strains on electrical properties after the encapsulation procedure provide insufficient information for improving the electrical stability of ultrathin silicon nanomembrane (Si NM)-based metal oxide semiconductor capacitors (MOSCAPs). Here, we used atomic layer deposition and molecular layer deposition to generate 3.5 dyads of alternating 11 nm AlO and 3.5 nm aluminum alkoxide (alucone) nanolaminates on flexible Si NM-based MOSCAPs. Moreover, we bent the MOSCAPs inwardly to radii of 85 and 110.5 mm and outwardly to radii of 77.5 and 38.5 mm. Subsequently, we tested the unbent and bent MOSCAPs to determine the effect of strain on various electrical parameters, namely the maximum capacitance, minimum capacitance, gate leakage current density, hysteresis voltage, effective oxide charge, oxide trapped charge, interface trap density, and frequency dispersion. The comparison of encapsulated and unencapsulated MOSCAPs on these critical parameters at bending strains indicated that AlO/alucone nanolaminates stabilized the electrical and interfacial characteristics of the Si NM-based MOSCAPs. These results highlight that ultrathin AlO/alucone nanolaminates are promising encapsulation materials for prolonging the operational lifetimes of flexible Si NM-based metal oxide semiconductor field-effect transistors.

Al2O3/alucone electrical stability metal-oxide-semiconductor capacitors silicon nanomembrane ultrathin flexible encapsulation

SCI ; EI

英语

其他

Chemistry ; Science & Technology - Other Topics ; Instruments & Instrumentation ; Physics

Chemistry, Analytical ; Nanoscience & Nanotechnology ; Instruments & Instrumentation ; Physics, Applied

WOS:001152867600001

MDPI

2-s2.0-85183329027

Scopus

1.Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry,School of Microelectronics,Xidian University,Xi’an,710071,China
2.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Wang，Zhuofan,Lu，Hongliang,Zhang，Yuming,et al. Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors[J]. Micromachines,2024,15(1).

Wang，Zhuofan,Lu，Hongliang,Zhang，Yuming,Liu，Chen,Zhang，Haonan,&Yu，Yanhao.(2024).Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors.Micromachines,15(1).

Wang，Zhuofan,et al."Ultrathin Flexible Encapsulation Materials Based on Al2O3/Alucone Nanolaminates for Improved Electrical Stability of Silicon Nanomembrane-Based MOS Capacitors".Micromachines 15.1(2024).