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[1] Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT 来源：IEEE Transactions on Electron Devices, 2018, 卷号: 65, 期号: 5, 页码: 1759-1764 作者： Qi, Yongle; Zhu, Yumeng; Zhang, Jiang; Lin, Xinpeng; Cheng, Kai; et al. 浏览/下载:23/0被引[WOS]:24被引[Scopus]:26影响因子:2.9期刊论文SCIEI 评论分享收藏
[2] Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications 来源：IEEE Journal of the Electron Devices Society, 2020, 卷号: 8, 页码: 1138-1144 作者： Cheng，Wei Chih; Zeng，Fanming; He，Minghao; Wang，Qing; Chan，Mansun; et al. Adobe \| 浏览/下载:8/0被引[WOS]:8被引[Scopus]:8影响因子:2.0期刊论文SCIEI 评论分享收藏